SS8550DBU Allicdata Electronics
Allicdata Part #:

SS8550DBU-ND

Manufacturer Part#:

SS8550DBU

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 1.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 25V 1.5A 200MHz 1W Th...
DataSheet: SS8550DBU datasheetSS8550DBU Datasheet/PDF
Quantity: 207
1 +: $ 0.22000
10 +: $ 0.21340
100 +: $ 0.20900
1000 +: $ 0.20460
10000 +: $ 0.19800
Stock 207Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: SS8550
Description

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The SS8550DBU, also known as the Motorola Advanced Transistor, is an NPN bipolar junction transistor (BJT). It was especially designed for applications in power management l circuits. It features low saturation voltage, low collector-to-base capacitance, and low reverse current exponential growth. As such, it provides excellent performance as a power amplifier, a driver, a switch, and a protection device, among other roles. It works by allowing current to flow from the collector to the emitter when a voltage is applied to the base.

The SS8550DBU can be used in a variety of power supply and amplifier applications. It is ideal for use as a voltage regulator or a DC-DC converter due to its low saturation voltage and low reverse current exponential growth characteristics. It can also be used in audio or video amplifier systems to provide high efficiency and low noise. Additionally, it can be utilized in switching power supplies, semiconductor sensory systems, and optical transmitters, among other applications. In all of these roles, the SS8550DBU is highly reliable and energy-efficient, making it a great choice for many different types of devices.

The SS8550DBU is a NPN type BJT, meaning it is composed of two P-type and one N-type semiconductors. In order for it to work its full magic, it must be connected with a collector and an emitter at opposite ends and a base in the middle. By applying positive voltage to the base, current will start to flow from collector to emitter. It is this same current flow that makes this transistor so versatile, allowing it to switch in and out of power amplifier and driver circuits, sound or video amplifying systems, and switching power supplies, among other applications. The SS8550DBU can even be used with low level voltage sources, allowing for its use in a broad range of control and protection applications.

The SS8550DBU is also well-suited for use in many types of power management and control applications. The low collector-to-base capacitance allows for switching operations with minimal power dissipation. Additionally, its low saturation voltage makes it ideal for switching power supplies, which require precise voltage regulation. The low reverse current exponential growth characteristic eliminates the dangers of voltage spikes, which can occur when transistors are operated in series configurations. Furthermore, the low saturation voltage helps to ensure that the power supply will operate reliably when the load current changes.

The SS8550DBU is a versatile device for many different power and amplifier applications. Its excellent performance and reliable operation make it ideal for applications in sound or video amplifying systems, switching power supplies, semiconductor sensing systems, and optical transmitters, among other uses. Additionally, its low saturation voltage and reverse current exponential growth make it perfect for use in a variety of power management and protection applications as well. For all of these reasons, it is an excellent choice for many different types of devices.

The specific data is subject to PDF, and the above content is for reference

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