SS8P2CLHM3_A/I Allicdata Electronics
Allicdata Part #:

SS8P2CLHM3_A/I-ND

Manufacturer Part#:

SS8P2CLHM3_A/I

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 20V 4A TO277A
More Detail: Diode Array 1 Pair Common Cathode Schottky 20V 4A ...
DataSheet: SS8P2CLHM3_A/I datasheetSS8P2CLHM3_A/I Datasheet/PDF
Quantity: 1000
6500 +: $ 0.14878
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: Automotive, AEC-Q101, eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 4A
Voltage - Forward (Vf) (Max) @ If: 540mV @ 4A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 300µA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Description

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Diodes - Rectifiers - Arrays includes many different components and application fields, one of them being the SS8P2CLHM3_A/I. Understanding the application field and working principle of this type of diode is essential to make good use of its properties and capabilities.

SS8P2CLHM3_A/I Application Field

The SS8P2CLHM3_A/I is a type of Schottky Barrier Diode (SBD), and it is specifically designed for high speed switching applications. It is particularly used for automotive applications where the device must sustain a particular voltage, temperature and working conditions. Also, this type of diode can find its application in low voltage power supply designs, as it has a wide operating temperature range: from -55°C to 175°C.

This type of diode is also employed in signal processing circuits, such as TV receivers and tuners. The SBD is also suggested for solar energy applications, as it is capable of withstanding high temperatures and considerable amount of light.

SS8P2CLHM3_A/I Working Principle

The working principle that governs this diode is based on the p-n junction which forms its structure. Once forward voltage is applied, electrons move from the n-doped area to the p-doped area, and this movement produces a current of electron flow. In the reverse direction, an electrostatic field forms a barrier on the junction, and this reduces the current to very low levels, making it in fact non-existent.

This working principle, together with its construction and technology, allows this diode to have a fast switching speed, since it handles higher voltages and high amperage levels. It is capable of handling a forward voltage of up to 60V and current up to 0.5A, granting it a relatively higher effective switching efficiency compared to other types of Schottky Barrier diodes.

Conclusion

The SS8P2CLHM3_A/I is a Schottky Barrier Diode specially designed for high speed switching applications. Its Working principle is based on p-n junctions, and its construction and technology allow this diode to have a fast switching speed and capability of handling higher voltage and current levels.

For this reason, it is particularly useful for power supply design, signal processing circuits, automotive and solar energy applications. Understanding the application field and working principle of this type of diode is important for correctly taking advantage of its features.

The specific data is subject to PDF, and the above content is for reference

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