| Allicdata Part #: | SS8P2L-M3/86AGITR-ND |
| Manufacturer Part#: |
SS8P2L-M3/86A |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE SCHOTTKY 20V 8A TO277A |
| More Detail: | Diode Schottky 20V 8A Surface Mount TO-277A (SMPC) |
| DataSheet: |  SS8P2L-M3/86A Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.16599 |
| 3000 +: | $ 0.15134 |
| 7500 +: | $ 0.14157 |
| 10500 +: | $ 0.13181 |
Specifications
| Series: | eSMP® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 20V |
| Current - Average Rectified (Io): | 8A |
| Voltage - Forward (Vf) (Max) @ If: | 570mV @ 8A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 200µA @ 30V |
| Capacitance @ Vr, F: | 330pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-277, 3-PowerDFN |
| Supplier Device Package: | TO-277A (SMPC) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | SS8P2L |
Description
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The SS8P2L-M3/86A is a diode rectifier designed for use in many automated and electrical equipment applications. It is a single diode, which is the most common form of rectifier used today. The SS8P2L-M3/86A has a maximum current rating of 12A, a forward voltage drop of 1.1V, and a reverse recovery time of 1.5µs. The SS8P2L-M3/86A can be used in a wide variety of applications, including power supplies, motor controllers, and various other power conversion circuits. The SS8P2L-M3/86A is a common form of a rectifier diode. A rectifier diode is a type of diode that is designed to allow current flow in one direction only. This type of diode is ideal for use in circuits where the power supply needs to be isolated and regulated, as it prevents current from flowing in the reverse direction. The SS8P2L-M3/86A is constructed from two different regions of semiconductor materials. The first area is made from doped silicon, which acts as the diode’s cathode. This silicon region is located near the anode of the diode, and serves as a barrier for current flow in the reverse direction. The silicon region also provides the diode with higher current bypass capability when compared to other types of rectifier diodes. The second region is a lightly doped material located around the anode of the diode. This second region serves as a tunnel, which allows current to flow in the forward direction only. The tunnel also serves as a resistor, limiting the amount of current being drawn by the diode.The SS8P2L-M3/86A works by using an internal PN junction. This junction is made up of two separate layers of silicon that are oppositely charged. When a voltage is applied to the diode, a small current leakage path is created through the junction. This current path allows current to flow through the diode in the forward direction only. To make the diode more efficient, the body of the diode is designed with a specific geometry. This geometry enables the diode to have a higher efficiency and better regulation of current. The diode is also designed to have a limited reverse recovery time, which is an important factor in power conversion applications.The SS8P2L-M3/86A is an ideal choice for many automated and electrical equipment applications. The diode is designed for a wide input voltage range and can handle up to 12A of current. Its efficient geometry enables the diode to dissipate less power during operation. In addition, the diode has a low forward voltage drop and a fast reverse recovery time, making it suitable for many power conversion applications.Overall, the SS8P2L-M3/86A is an ideal choice for a wide range of applications that need efficient power regulation and isolation. The diode is constructed with a specific geometry to enable higher power conversion efficiency, and its limited reverse recovery time makes it suitable for many power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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| SS8P5C-M3/87A | Vishay Semic... | 0.16 $ | 1000 | DIODE ARRAY SCHOTTKY 50V ... |
| SS8P6C-M3/87A | Vishay Semic... | 0.16 $ | 1000 | DIODE ARRAY SCHOTTKY 60V ... |
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| SS8P3CL-M3/87A | Vishay Semic... | 0.16 $ | 1000 | DIODE ARRAY SCHOTTKY 30V ... |
| SS8P2CLHM3_A/I | Vishay Semic... | 0.16 $ | 1000 | DIODE SCHOTTKY 20V 4A TO2... |
| SS8P3CLHM3_A/I | Vishay Semic... | 0.16 $ | 1000 | DIODE SCHOTTKY 30V 4A TO2... |
| SS8P3C-M3/86A | Vishay Semic... | 0.19 $ | 1000 | DIODE ARRAY SCHOTTKY 30V ... |
| SS8P3CHM3_A/H | Vishay Semic... | 0.19 $ | 1000 | DIODE SCHOTTKY 30V 4A TO2... |
| SS8P4CHM3_A/H | Vishay Semic... | 0.19 $ | 1000 | DIODE SCHOTTKY 40V 4A TO2... |
| SS8P5CHM3_A/H | Vishay Semic... | 0.2 $ | 1000 | DIODE SCHOTTKY 8A 50V TO2... |
| SS8P2CL-M3/86A | Vishay Semic... | 0.2 $ | 1000 | DIODE ARRAY SCHOTTKY 20V ... |
| SS8P3CL-M3/86A | Vishay Semic... | 0.2 $ | 1000 | DIODE ARRAY SCHOTTKY 30V ... |
| SS8P2CLHM3_A/H | Vishay Semic... | 0.2 $ | 1000 | DIODE SCHOTTKY 20V 4A TO2... |
| SS8P3CLHM3_A/H | Vishay Semic... | 0.2 $ | 1000 | DIODE SCHOTTKY 30V 4A TO2... |
| SS8P3L-M3/86A | Vishay Semic... | -- | 9000 | DIODE SCHOTTKY 30V 8A TO2... |
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| SS8P3LHM3_A/H | Vishay Semic... | 0.19 $ | 1000 | DIODE SCHOTTKY 30V 8A TO2... |
| SS8P3L-M3/87A | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 30V 8A TO2... |
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| SS8PH10HM3_A/H | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 100V 8A TO... |
| SS8P2L-M3/86A | Vishay Semic... | 0.18 $ | 1000 | DIODE SCHOTTKY 20V 8A TO2... |
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