
Allicdata Part #: | SSA23L-M3/5AT-ND |
Manufacturer Part#: |
SSA23L-M3/5AT |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 2A 30V DO-214AC |
More Detail: | Diode Schottky 30V 2A Surface Mount DO-214AC (SMA) |
DataSheet: | ![]() |
Quantity: | 1000 |
7500 +: | $ 0.06469 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 490mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 200µA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -65°C ~ 150°C |
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The SSA23L-M3/5AT is a single rectifier diode with a wider application field and highly reliable working principle. It is an electronic component made up of an anode (positive pole), a cathode (negative pole), and a P-type semiconductor material. It is integrated with an insulated-gate bipolar transistor (IGBT), allowing it to be connected in a wide range of rectifying circuit applications.
The device is suitable for both AC and DC applications for power products and motor control applications. It is capable of providing higher current and voltage ratings compared to other rectifier diodes. The device\'s low forward voltage drop provides efficient power dissipation and low losses. It is also designed to offer excellent temperature and power cycling performance, along with low switching losses.
The SSA23L-M3/5AT device is designed to provide protection against short-circuit current and high surge currents. It is capable of withstanding inrush currents as high as 1,000 A and can be used in a wide range of applications, such as automotive electrical systems, LED lighting applications, and industrial drives.
The device works by utilizing the property of P-type semiconductors in which a potential barrier is generated at each junction. This potential barrier allows current to flow in only one direction (forward) and produces a rectified signal. When the anode is at a higher potential than the cathode, the diode acts as an open circuit and will not let current flow. However, when the anode is at a lower potential than the cathode, the diode acts as a closed circuit and allows current to flow through.
The PN junction of the SSA23L-M3/5AT has a temperature-dependent threshold voltage known as the "forward voltage drop". This is the voltage threshold required for current to flow through the diode. The PN junction also has a temperature-dependent reverse recovery time, which is the time it takes for the diode to switch from its forward-biased state to its reverse-biased state.
The SSA23L-M3/5AT can operate within a wide range of environments and temperature conditions. It is capable of operating temperatures of up to 125°C with a reverse leakage current as low as 0.1µA, which enables it to perform efficiently even in harsh environments. The device is also designed to meet the IEC standards that are applicable to rectifier diodes.
The SSA23L-M3/5AT is a robust device with a wide range of applications and is suitable for use in a variety of rectifier circuits. It is designed to provide high efficiency, long life, low on-resistance, and high frequency performance. This makes it an ideal choice for a wide range of rectifier applications.
The specific data is subject to PDF, and the above content is for reference
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