SSA33LHE3_A/H Allicdata Electronics
Allicdata Part #:

SSA33LHE3_A/H-ND

Manufacturer Part#:

SSA33LHE3_A/H

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 30V 3A DO214AC
More Detail: Diode Schottky 30V 3A Surface Mount DO-214AC (SMA)
DataSheet: SSA33LHE3_A/H datasheetSSA33LHE3_A/H Datasheet/PDF
Quantity: 1000
1800 +: $ 0.11021
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: SSA33L
Description

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SSA33LHE3_A/H diodes are a kind of single rectifiers commonly used for various application areas. They are prevailing in the market and widely used in various industries and applications. The most common application of SSA33LHE3_A/H diodes is rectification. In rectification process, the direct current passes from anode to cathode and thus is changed from alternating current to direct current. This conversion process is done in facilities and places that a require alternating current for their operation.

Another major use for SSA33LHE3_A/H diodes is voltage stabilization. Regulating the amount of voltage passing through it is especially important in different application areas like communication, measurement, and many others. These diodes are usually used to absorb any excessive voltage spikes, which ensures that power supply unit, microchips, transistors, and other components connected to it remain intact.

Additionally, SSA33LHE3_A/H diodes are employed in many other application fields, like solar energy, medical devices, and power protection systems. Furthermore, for example, these diodes can be used to control the current which is attempted to pass through it by using different voltage levels. It helps avoid burning out of the circuit by not allowing passage of excess electrical current beyond its rated specifications.

The main working principle of SSA33LHE3_A/H is based on the theory of P-N junction diode. It works in a simple way, when a small amount of voltage is applied, it allows the current to flow freely in a single direction, which is known as forward bias. The reverse bias, on the other hand, blocks current, when the voltage becomes too large and is almost equal to the P-N junction’s built-in voltage. In P-N junction, the depletion region and a drift region of the diode is created, and the structure of the regions is responsible for rectification and voltage stabilization of the component.

SSA33LHE3_A/H diodes are specifically designed for general purpose applications. These diodes offer high efficiency, good switching characteristics, and high surge ratability. Additionally, these devices have excellent thermal properties, tolerating temperature up to 175℃ (347°F).

Finally, SSA33LHE3_A/H diodes provide a range of capability in the design and performance of rectifier circuits. Thus, these provide a highly effective, cost-efficient solution in the application area and are popular. These diodes are reliable, simple to use, require little maintenance and operate at high speed.

The specific data is subject to PDF, and the above content is for reference

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