SSESD11B5.0ST5G Allicdata Electronics
Allicdata Part #:

SSESD11B5.0ST5G-ND

Manufacturer Part#:

SSESD11B5.0ST5G

Price: $ 0.06
Product Category:

Circuit Protection

Manufacturer: ON Semiconductor
Short Description: TVS DIODE 5V 10V 2DSN
More Detail: N/A
DataSheet: SSESD11B5.0ST5G datasheetSSESD11B5.0ST5G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
5000 +: $ 0.05623
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Supplier Device Package: 2-DSN (0.60x0.30)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: --
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Series: --
Voltage - Breakdown (Min): 5.8V
Voltage - Reverse Standoff (Typ): 5V (Max)
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes, or transient voltage suppression diodes, are commonly used within electronics for their power protection ability. The SSESD11B5.0ST5G is a popular type, designed with the ability to provide a low on-state resistance and fast response time in all conditions. This makes it a popular choice for both industrial and consumer electronics, allowing it to protect applications against over-voltage, over-current, and surge events.

The SSESD11B5.0ST5G is a surface mount diode with a glass passivated junction to ensure good performance in all environmental conditions. It is typically sold in a SMA (surface mount assembly) package, but other variations can be purchased. The SSESD11B5.0ST5G builds on this style of TVS diode, known as a Bi-Directional Diode, providing a low forward voltage drop. This bi-directional information provides the user with a breakdown voltage of 5.0V (VDGR). The power dissipation of the diode can be calculated as VDD x ISC, where VDD is the clamping voltage (5.0V) and ISC is the reverse leakage current.

The fast response times of the SSESD11B5.0ST5G allow it to react quickly to any over-voltage or over-current conditions, providing increased power protection. The diode is capable of providing a maximum Reverse Stand-off Voltage of 10V (VRWM) and a maximum surge current of 11A (IPPM). This makes it ideal for applications that require both surge protection and heightened reliability.

The working principle of the SSESD11B5.0ST5G is straightforward and based on the behavior of a diode. A diode is a two-lead semiconductor that can conduct current in one direction and block it in the other direction. The SSESD11B5.0ST5G takes advantage of this behavior by creating an asymmetrical electric field between the two diodes’ anode and cathode. When an over-voltage or over-current is applied, the current is blocked in the direction of the cathode. This causes the electric field to become opposite of the direction of the applied voltage or current, causing the diode to become temporarily “off”.

By reversing the direction of the electric field, the diode effectively blocks any over-voltage or over-current. The SSESD11B5.0ST5G also features an internal diode, known as “clamping diode”, which provides a limitation to the maximum allowed reverse voltage drop. This ensures the power supply remains within the required safe operating parameters.

Due to their low on-state resistance and fast response time, the SSESD11B5.0ST5G is an ideal protection mechanism for a range of consumer and industrial electronics. The bi-directional diode provides additional protection against over-voltage and over-current while the internal clamping diode ensures a safe operating voltage is maintained. These features make the SSESD11B5.0ST5G a popular choice for applications that require reliable power protection.

The specific data is subject to PDF, and the above content is for reference

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