SST25VF080B-50-4C-QAF

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Integrated circuits are circuit elements that are electronically manufactured on a single chip. They can integrate thousands or millions of electronic elements on a single chip. The integrated circuit can perform its function when the power supply is turned on. Among them, SST25VF080B-50-4C-QAF is one of the integrated circuits, which belongs to the memory. In this article, the application fields and working principles of SST25VF080B-50-4C-QAF will be introduced in detail.

SST25VF080B-50-4C-QAF Application Field

SST25VF080B-50-4C-QAF is an 8-Pin SPI Flash Memory chip, the package is MCP, a MLP package with 2 x 4 pin size. It is a low-power nonvolatile global serial flash memory that uses an advanced tunneling electron injection growth technique to achieve low-power technology and superior read/write operating performance. SST25VF080B-50-4C-QAF can provide reliable storage in a wide range of embedded applications such as industrial products, instrumentation and equipments, test & measurement, security systems and automated meter reading.

SST25VF080B-50-4C-QAF can provide 8Mbit (1M-byte) of storage in a single monolithic chip. It offers an excellent combination of reliable, high-speed, single-supply operation, industry-standard opcodes and high write endurance. It is ideal for code-storage, product configuration and small data storage applications including firmware images for upgradeable product.

SST25VF080B-50-4C-QAF Working Principle

SST25VF080B-50-4C-QAF uses serial peripheral interface (SPI) protocol to communicate. It is low power single voltage memory, only need 3.3V supply voltage, which can perform high speed operation at low power, and the signal quality of its I/O interface is also improved. It supports read identity, read status, erase sector, program and read operations. In addition, it supports JEDEC standard SPI write/erase operations, reset and suspend/resume operations.

SST25VF080B-50-4C-QAF provides 8Mbit (1M-byte) storage in a single monolithic 8-pin MCP package. The storage media is a 1M-byte nonvolatile memory (NVM) array. The NVM array is deliberately segmented into addressable 2k-byte sectors, which can be erased and reprogrammed in standard-size atomic operations.

SST25VF080B-50-4C-QAF can meet the needs of high speed and low power SPI compatible serial Flash memory. Its features include high speed write, fast random access and low power consumption. The internal design structure of SST25VF080B-50-4C-QAF is configured with a read only cyclic and burst counter, a power on refresh controller and a refresh data buffer from which data was read and written.

SST25VF080B-50-4C-QAF utilizes advanced tunneling injection growth process to achieve low power consumption and high speed read and write performance. It also has an erase algorithm composed of two steps: a surface rapid erase and a memory correct erase. In this way, the mass erase operation of SST25VF080B-50-4C-QAF can be used as a standard write routine to reduce as much time and power consumption as possible.

To sum up, SST25VF080B-50-4C-QAF is a low-power nonvolatile global serial flash memory chip. It is widely used in embedded applications such as industrial products, instrumentation and equipments, security systems, test & measurement, and automated meter reading. It uses SPI protocol to communicate and its write/erase operations are in accordance with JEDEC standard protocols. In addition, its working principle is to use a advanced tunneling injection growth technique, and an two-step erase algorithm to reduce time and power consumption.

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