SST25VF020B-80-4I-SAE-T Integrated Circuits (ICs)

Series:	SST25
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	2Mb (256K x 8)
Clock Frequency:	80MHz
Write Cycle Time - Word, Page:	10µs
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	SST25VF020B

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Memory: SST25VF020B-80-4I-SAE-T Application Field and Working PrincipleMemory is a key component in the field of computer systems, providing short-term storage for data, instructions, and information. SST25VF020B-80-4I-SAE-T is a type of memory that incorporating 25-nanometer NOR Flash technology for reliable and stable storage.SST25VF020B-80-4I-SAE-T is the comprehensive set of the 25-nanometer NOR Flash products from the semiconductor manufacturer SuperFlash. It offers unparalleled performance and power efficiency and is suitable for miniaturized designs, making it an ideal solution for a wide range of embedded systems.The SST25VF020B-80-4I-SAE-T is optimized for a broad range of next-generation applications, ranging from automotive to industrial. This NOR Flash product is used in a wide variety of system-on-chip (SoC) designs for applications such as: data storage, automotive, digital consumer, and industrial. Its advanced features such as its 16nm process node and wide supply voltage range allows it to operate reliably in a wide range of temperatures while providing reliable performance.The SST25VF020B-80-4I-SAE-T has the following specifications: a supply voltage range of 1.65V–2.7V, a read voltage range of 2.7V–3.6V, an erasing voltage range of 1.65V–2.7V, and a write voltage range of 2.7V–3.6V. Additionally, the SST25VF020B-80-4I-SAE-T is characterized by its low power consumption, which is typically in the order of 2mW–5mW, thanks to its advanced power-saving features. It is also capable of achieving data write speeds of up to 6.4 Mbits/s and data read speeds of up to 66 Mbits/s. Finally, the SST25VF020B-80-4I-SAE-T has an endurance of up to 100,000 erase/program cycles, meaning it will last for a long period of time with regular usage.The working principle of SST25VF020B-80-4I-SAE-T is based on the functionality of a MTP, or Multi-Time Programmable, Flash memory. This provides the user with the ability to store and manage data and instructions easily on the chip by programming it once, while ensuring data reliability.The SST25VF020B-80-4I-SAE-T is programmed and erased by connecting either a single-pin bus or a four-pin SPI interface to the memory. Once connected, data is written and erased using a combined voltage. The write voltage is utilized to write the data, while the erase voltage will erase any data previously written.The SST25VF020B-80-4I-SAE-T can also be used for secure system applications, as it has an integrated security bit for write and erase protection. This makes the memory especially useful for applications that require a high level of security and data protection, such as secure mobile devices, automotive infotainment systems, and consumer electronics.In conclusion, the SST25VF020B-80-4I-SAE-T offers advanced features and performance that make it a great choice for many applications. It is optimized for a broad range of next-generation applications and its low power consumption, fast write and read speeds, and integrated security make it an ideal choice for user-friendly and secure designs. Therefore, it is the perfect solution for applications that require reliable, secure, and power-efficient storage.

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