SST26WF040B-104I/MF Allicdata Electronics
Allicdata Part #:

SST26WF040B-104I/MF-ND

Manufacturer Part#:

SST26WF040B-104I/MF

Price: $ 0.63
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 4M SPI 104MHZ 8WDFN
More Detail: FLASH Memory IC 4Mb (512K x 8) SPI - Quad I/O 104M...
DataSheet: SST26WF040B-104I/MF datasheetSST26WF040B-104I/MF Datasheet/PDF
Quantity: 65
1 +: $ 0.57330
25 +: $ 0.55163
Stock 65Can Ship Immediately
$ 0.63
Specifications
Series: SST26 SQI®
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WDFN (5x6)
Base Part Number: SST26WF040
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SST26WF040B-104I/MF is an integrated circuit that belongs to the category of non-volatile memory. It is a dynamic random access memory (DRAM) device that can store data without the need for a constant power supply like other DRAMs. This non-volatile memory device can retain the data stored in it for up to 10 years, making it highly suitable for applications that require long-term data storage.

The SST26WF040B-104I/MF is built in a 4Kx16-bit configuration and uses SRAM-like architecture with asynchronous address input. It is an ideal companion to processors and controllers that use real-time data address input, such as data logging, real-time control, medical and industrial automation systems. The device is highly power-efficient due to the low voltage range and the asynchronous address input.

The SST26WF040B-104I/MF utilizes a pin-for-pin function compatible advanced static RAM interface and is powered by a single 3V voltage supply. The device works on the basic operating principles of Flash memory, using a parallel memory device as opposed to a serial memory device. The device is in fact a combination of Flash and SRAM technologies, as the Flash component stores the data permanently whereas the SRAM component operates as a buffer for data read and write operations.

The SST26WF040B-104I/MF is a highly competitive non-volatile memory offering not only high storage density but also the greatest design flexibility and best performance. It is widely used in a variety of applications such as embedded systems, industrial automation, automotive systems, automotive infotainment systems, medical electronics, retail electronics and consumer electronics.

The main advantage of the SST26WF040B-104I/MF is its price-to-performance ratio. Its low power consumption and higher performance at a much lower cost gives it a strong competitive advantage in applications requiring embedded memory. The device provides high reliability and durability due to its built-in error-correction and chip-protect features. The device also features fast read and write cycle times, a wide temperature range and a low power standby mode.

Overall the SST26WF040B-104I/MF is an ideal solution for embedded applications that require an efficient and low-cost memory solution for data storage and retrieval. Due to its low power consumption, wide temperature range and high storage density, this memory device is highly preferred and widely used in various applications.

The specific data is subject to PDF, and the above content is for reference

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