SST25VF080B-50-4I-S2AE-T

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The SST25VF080B-50-4I-S2AE-T memory is a Flash memory from the SST25VF080B series developed by Microchip Technology Inc. This series adopts the standard SPI bus protocol and provides the users with a wide range of options in terms of package size and density. This kind of memory is mainly used in embedded applications where high performance, ease of use and low power consumption are required. The device is capable of read, write, and erase operations that can be used to store and retrieve data.

The SST25VF080B-50-4I-S2AE-T is a 8 megabit flash memory that employs the 1.8V power supply. It operates at a frequency of 50MHz and provides a maximum Serial Clock frequency (SCK) of 50MHz, ideal for those applications requiring quicker data manipulation. It also supports the four standard SPI communication interface protocols — Serial Low-Level Read, Serial High-Level Read, Serial Low-Level Write and Serial High-Level Write modes.

This device utilizes the 4kbytes Uniform Sector architecture, allowing transferring data with a good linear performance with read and write speeds up to 55MB/s. The SST25VF080B-50-4I-S2AE-T also supports the Standard Asynchronous Reset and Standard Clock polarity modes and provides an Erase Suspend/Erase Resume feature. It provides the users with an array of standard commands for easy operation, along with an array of optional security features.

The SST25VF080B-50-4I-S2AE-T memory is ideal for applications requiring an easy-to-use and feature-rich Flash memory solution. It is commonly used in applications such as consumer electronics, medical and industrial electronics, automotive, and digital memory storage. With its reliable read and write speeds, high-density and low-power consumption, it is a popular choice for many projects.

In terms of working principle, the SST25VF080B-50-4I-S2AE-T is a non-volatile memory that stores data by utilizing the Floating Gate MOSFET structure. It stores data in a grid of floating gates that are arranged in a two-dimensional array. When an electric field is applied to a cell, electrons are stored in the floating gate, causing the cell to become electrically charged. This stored charge is the data that is written to the memory cell. The same method is used to read the data from the memory cell by applying an electric field and detecting the presence or absence of a charge.

The SST25VF080B-50-4I-S2AE-T memory also features non-volatile storage, meaning that its contents will not be erased unless intentionally deleted. This makes the device ideal for applications that require data to be stored for long periods of time without the need for frequent power cycling. The memory also supports the advanced Secure Sector feature, which allows for the secure storage and retrieval of data.

The SST25VF080B-50-4I-S2AE-T memory is a valuable asset in many applications due to its high performance, low power consumption, and support for a wide range of security features. In addition, the uniform sector architecture and its support for various SPI bus protocols make this memory a perfect choice for those projects that require a reliable and cost-effective solution.

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