SST6427T116

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The SST6427T116 is a general-purpose NPN bipolar junction transistor (BJT). It is typically used as an amplifier transistor in signal transmission applications. The device features a built-in base-to-emitter junction diode and an internally compensated collector-to-base junction diode. The device is characterized by low-noise operation and low-power consumption.

The SST6427T116 device has an active voltage range at the base of 3.0V to 7.0V, an active current range of 25mA to 200mA, and a maximum collector current of 1A. The device has an operating temperature range of -55°C to 150°C, and is rated for a maximum-collector-to-base junction voltage of 40V. The device has a maximum-power dissipation of 800mW and a maximum junction-to-case thermal resistance of 1.5°C/W.

The working principle of the SST6427T116 is as follows: current flows from the emitter to the collector when the base is forward biased and the collector current is controlled by the base current. When a forward bias voltage is applied to the base, the base-emitter junction is forward biased, and electrons are injected into the base of the transistor. These electrons are then attracted to the collector, and a small current flow is established between the emitter and the collector. This current flow is then amplified by the transistor to produce a larger current flow that is proportional to the base current.

The SST6427T116 has a wide range of applications. It is primarily used in low-noise operation, signal transmission, and low-power applications. It is also used as an amplifier transistor in television tuners, RF amplifiers, and audio amplifiers. Additionally, the device is commonly found in switching applications, digital circuits, and integrated circuits.

In summary, the SST6427T116 is a general-purpose NPN BJT that is typically used as an amplifier transistor in signal transmission applications. It has an active voltage range at the base of 3.0V to 7.0V, an active current range of 25mA to 200mA, and a maximum collector current of 1A. The device has a maximum-power dissipation of 800mW and a maximum junction-to-case thermal resistance of 1.5°C/W. The SST6427T116 has a wide range of applications including low-noise signal transmission, low-power applications, television tuners, RF amplifiers, audio amplifiers, switching applications, digital circuits, and integrated circuits.

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