Allicdata Part #: | SSTA06HZGT116TR-ND |
Manufacturer Part#: |
SSTA06HZGT116 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN GENERAL PURPOSE TRANSISTOR |
More Detail: | Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 200m... |
DataSheet: | SSTA06HZGT116 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02193 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SSTA06HZGT116 is a NPN single-transistor device constructed from two layers of semiconductor material, with three regions: a source, a drain, and a gate. It belongs to the family of bipolar junction transistors (BJT) which are used to amplify signals and switching applications. These transistors allow current to flow between the source and drain terminals resulting in switching action of the device when a voltage is applied to the gate.
One of the most common uses of the SSTA06HZGT116 is in circuit design, where the transistor can be used to provide current gain to an application or to amplify a signal. The transistor works by regulating the amount of current that flows between the two terminals. The gate region acts as a control for the current. By changing the gate terminal voltage, it can create a large change in current flow due to the transistor\'s small size. This makes them an ideal choice for applications requiring large changes in current with small changes in voltage.
The SSTA06HZGT116 also has a wide range of applications in long-life and high reliability applications, such as military, aerospace and automotive applications. They are also used for their switching capabilities, where their fast switching speed and low power consumption make them an effective choice for applications requiring power efficiency.
The operation of the SSTA06HZGT116 is based on the principle of bipolar junction operation. When a voltage is applied to the gate terminal, current starts to flow between the source and drain terminals. This current flow is called the bias current. When the gate voltage is increased, the amount of current flowing between the source and drain terminals also increases and when the gate voltage decreases, the amount of current flowing between the source and drain terminals decreases.
The amount of current flow or switching speed of the SSTA06HZGT116 transistor is determined by the gate capacitance and the voltage applied to the gate terminal. The gate capacitance is a measure of how much energy is needed to charge and discharge the gate, which then affects the amount of current that flows between the source and drain terminals.
The SSTA06HZGT116 also has a wide range of applications in long-life and high reliability applications, such as military, aerospace and automotive applications. They are also used for their switching capabilities, where their fast switching speed and low power consumption make them an effective choice for applications requiring power efficiency.
To sum up, the SSTA06HZGT116 is an ideal solution for a variety of applications. This device can provide current gain, switching and improved signal amplification, as well as providing fast switching speeds and lower power consumption. This makes it a great choice for a range of applications that require high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SSTA13T116 | ROHM Semicon... | 0.08 $ | 1000 | TRANS NPN 30V 0.3A SST3Bi... |
SSTA06T116 | ROHM Semicon... | -- | 6000 | TRANS NPN 80V 0.5A SST3Bi... |
SSTA56T116 | ROHM Semicon... | 0.08 $ | 3000 | TRANS PNP 80V 0.5A SST3Bi... |
SSTA28T116 | ROHM Semicon... | 0.08 $ | 1000 | TRANS NPN DARL 80V 0.3A S... |
SSTA06HZGT116 | ROHM Semicon... | 0.02 $ | 1000 | NPN GENERAL PURPOSE TRANS... |
SSTA56HZGT116 | ROHM Semicon... | 0.03 $ | 1000 | PNP GENERAL PURPOSE TRANS... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...