SSTVF16859BS,118

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SSTVF16859BS,118 is a logic-specialty logic design. It is a kind of static random access memory (SRAM) with a dual port random access memory (DRAM) storage device configuration. It is also called pseudo dual port SRAM. It is typically used in embedded systems and communication systems as a memory control device, or as a control as a processor in too slow clock speed.

SSTVF16859BS,118 has various characteristics, such as synchronous/ asynchronous device design, low operating current, low write cycle time, good read access time, low soft error rate (SER), small size, and good shock resistance. It also has high data bandwidth and high code option flexibility. In addition to these excellent features, SSTVF16859BS,118 also has high level of power management and can support low voltage level of operation.

Application Field

The SSTVF16859BS,118 device is designed with the goal of providing an efficient, robust and flexible memory device for embedded applications. Its primary use is in embedded systems and communication systems, including but not limited to the automotive, industrial, medical, network and military fields. SSTVF16859BS,118 can also be used in design analysis emulation and system integration. Because of its tremendous features, it is ideal for use in fast-paced and highly interactive applications, such as medical imaging and data acquisition.

Working Principle

The SSTVF16859BS,118 is a dual-port RAM that uses an internal transceiver for each port for data communication and access. The data is sent to the core of the memory device via the external address and data pins. The data is then stored in the DRAM and can be accessed by the respective ports. The ports on the SSTVF16859BS,118 have separate command and control structures. The memory is organized as a linear array of bytes with two banks of 64 bytes each. The CPU port can use either a synchronous bus interface or an asynchronous bus interface. The peripheral port uses an asynchronous bus structure with a single data pin to send and receive data.

The SSTVF16859BS,118 is designed to carry out multiple commands, such as write enable, read, write and reset. The write enable and write cycles are used to store data into the DRAM. The read cycles are to read the data stored in the DRAM. The reset cycle is used to reset the device when the power is disconnected. The write enable cycle performs a write to the SRAM structure and a read from the DRAM structure. The reset pin is used to reset the state of the internal registers.

The SSTVF16859BS,118 is a powerful, robust and flexible memory device for embedded systems and communication systems. It is ideal for applications where fast access time and high data bandwidth are required. With its multiple command cycles and support for a wide range of code and data options, it offers a wide range of customization and optimization for any logic-specialty logic design. The device offers excellent data bandwidth, low operating current, and low write cycle time combined with good read access time, low soft error rate, small size and good shock resistance makes it a perfect fit for any logic-specialty logic design.

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