Allicdata Part #: | SSVBC846BPDW1T1GOSTR-ND |
Manufacturer Part#: |
SSVBC846BPDW1T1G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP 65V SOT363 |
More Detail: | Bipolar (BJT) Transistor Array Surface Mount ... |
DataSheet: | SSVBC846BPDW1T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05094 |
6000 +: | $ 0.04585 |
15000 +: | $ 0.04075 |
30000 +: | $ 0.03820 |
75000 +: | $ 0.03396 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | -- |
Current - Collector (Ic) (Max): | -- |
Voltage - Collector Emitter Breakdown (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Power - Max: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | BC846BP |
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:SSVBC846BPDW1T1G Application Field and Working Principle
The SSVBC846BPDW1T1G is a Bipolar Junction Transistor (BJT) Array module. It is a three port integrated circuit integrated with power amplifier transistors. The module is the successor of SSVBC8064BTE3, providing higher power in a smaller form factor and with lower power consumption. The module is designed to be used in automotive, consumer electronics and industrial control circuits applications.
Design Characteristics
The SSVBC846BPDW1T1G has a small form factor and is 3.2mm x 3.2mm x 1.2mm. It provides a wide voltage range, operating from 3.3V to 15V with a high switch on time up to 80ns, making it suitable for a wide range of applications. The on channel resistance is typically 100mΩ, providing a very low drain-source drop-off. The module is ideal for applications that require high speed, high frequency switching and motor control.
Building Blocks
The SSVBC846BPDW1T1G is constructed from two separate devices. The first device is an array of NPN transistors, each capable of delivering up to 1A each (total maximum output of 4A). The second device is a power amplifier, capable of delivering up to 200mW.
Working Principle
The module is based on the NPN junction transistor. In this type of transistor, there is an emitter that emits electrons, a base which controls the current flow and a collector to collect the electrons. When a voltage is applied to the base, it allows current to flow from the emitter to the collector. The amount of current flow is controlled by the base voltage.
The power amplifier is used to increase the current output of the module. It takes the current input from the transistors and amplifies it, increasing the output current. This allows for higher power output from the module.
Applications
The SSVBC846BPDW1T1G module can be used in a wide range of applications including automotive, consumer electronics, industrial control circuits, and automotive applications. It is ideal for high-speed, high-frequency switching, motor control, and many other applications requiring a low on-state resistance.
Conclusion
The SSVBC846BPDW1T1G is a three port integrated circuit integrated with power amplifier transistors. It is a high-efficiency, low-power BJT array module, designed for high-speed, high-frequency switching and motor control. It is suitable for a range of applications from automotive to consumer electronics and industrial control circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SSVBC846BPDW1T1G | ON Semicondu... | 0.06 $ | 1000 | TRANS NPN/PNP 65V SOT363B... |
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