ST5027 Allicdata Electronics
Allicdata Part #:

ST5027-ND

Manufacturer Part#:

ST5027

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 800V 3A TO-220
More Detail: Bipolar (BJT) Transistor NPN 800V 3A 90W Through ...
DataSheet: ST5027 datasheetST5027 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Power - Max: 90W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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ST5027 is a bipolar(BJT) single transistor which belongs to a common family of electronic devices. It was developed by Sanken Electric Company, Japan in the late 1960s, and has been widely used in various device applications since then. The main purpose of the transistor is as a switching device, because it can switch high levels of currents with its low power consumption.

As a bipolar single transistor, ST5027 is suitable for low and medium power applications. It is especially suitable for controlling medium and low power equipment, as well as in digital circuits. The transistor can provide stable and reliable control of the currents and voltage it is subjected too.

The current gain of ST5027 is referred to as its Hfe, which is typically around 500 – 650. This is an essential feature for amplifying small signals, so it is suitable for low power audio amplifiers, as well as for low power communication devices. It can also be used to construct low power, high gain RF and microwave amplifiers.

Additionally, the ST5027 transistor can also be used for logic circuits. Its low power consumption allows it to be used for logic gates, thereby making possible smaller circuits, more portable device designs and lower power consumption compared to larger devices.

The working principle of the ST5027 transistor is based on the two distinct regions of the base and the collector. The base and collector of an ST5027 transistor should contain an electron layer and a hole layer. If a voltage is applied to the Base and Collector, it causes a shift in the electron and hole layers, allowing current to pass through. This principle is known as "The Charge Transfer Principle," and it is used in many applications.

One of the main advantages of using ST5027 transistor is its low power consumption. This is essential for low-power device applications, such as listening and recording devices, and for low power communication systems. Additionally, ST5027 transistor provides stability and reliability, which is essential for high reliability circuitry applications. It can provide maximum impedance with a high gain of up to 500-650.

In conclusion, ST5027 is a bipolar single transistor, developed by Sanken Electric Company, Japan. This transistor is suitable for low and medium power applications, especially for low power communication systems and logic gates. The working principle of the transistor is based on the transfer of electrons and holes, which causes a shift in the electron and hole layers. The main advantages of the ST5027 are its low power consumption, stability and reliability, as well as its high gain capabilities.

The specific data is subject to PDF, and the above content is for reference

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