ST57711 Allicdata Electronics
Allicdata Part #:

ST57711-ND

Manufacturer Part#:

ST57711

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 15V 0.2A TO-92
More Detail: Bipolar (BJT) Transistor PNP 15V 200mA 350mW Thro...
DataSheet: ST57711 datasheetST57711 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 300mV
Power - Max: 350mW
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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Transistors - Bipolar (BJT) - Single

The ST57711 is a high performance single bipolar junction transistor (BJT) of the NPN type. It has a rating of 150V, with a maximum collector current of 4A, and a maximum power dissipation of 30W. The ST57711 has a low-noise, low-distortion performance, making it suitable for use in high-end audio and radio frequency (RF) applications. It also has a wide operating temperature range, from -55¨C to +150 ¨C.

The ST57711 is commonly used in high-power amplifier stages, rf power amplifiers, receivers, amplifiers for headphones, and switching circuits. It is designed to withstand high collector-emitter voltages and high power dissipation levels. The design also has a wide safe operating area for higher current load and better thermal stability.

The ST57711 has an excellent performance with low power consumption due to its high current gain and low noise. It also features positive temperature coefficients for both the collector-emitter voltage and the base-emitter voltage.

The ST57711 working principle is based on the bipolar transistor structure. It is composed of two PN junctions, a collector and an emitter. The collector is the anode, where current flows in, and the emitter is the cathode, where current flows out. The base is an intervening layer between collector and emitter, which determines the amount of current flowing between collector and emitter.

The collector is connected to a positive voltage, and the emitter to a ground potential. In order to control the operation of the transistor, the base is connected to a controlling voltage. As the controlling voltage varies, the amount of current flowing between collector and emitter also varies. When the controlling voltage is increased, the current increases, and vice versa. This operation is known as the "current-voltage transfer behavior."

The ST57711 has several special features that make it ideal for applications such as audio power amplifiers. It has a low noise performance due to its low input capacitance and low collector special noise grade. It also has an enhanced surge protection capability thanks to its high dv/dt protection. The design also features low thermal resistance for improved thermal performance.

The ST57711 is an excellent choice for RF and audio power applications due to its high performance and low power consumption. It provides high reliability and is well-suited for use in a wide range of commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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