ST8812FP Allicdata Electronics
Allicdata Part #:

ST8812FP-ND

Manufacturer Part#:

ST8812FP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 600V 7A TO-220FP
More Detail: Bipolar (BJT) Transistor NPN 600V 7A 36W Through ...
DataSheet: ST8812FP datasheetST8812FP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 600V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4.5 @ 5A, 5V
Power - Max: 36W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Description

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The ST8812FP is one of the leading single bipolar junction transistors. It is a two terminal device that has special characteristics while operating in forward and reverse bias regions. Due to its wide range of potential uses, the ST8812FP is a popular choice for circuit applications. This article will discuss the applications and working principles for this device in more detail.

Application fields for the ST8812FP

The ST8812FP is used in many applications due to its capabilities and high performance compared to other single bipolar junction transistors. The most common application field for the ST8812FP is in power devices due to its capability to handle large currents up to 5A. Additionally, the high breakdown voltage and low power consumption allow it to be used in various switching applications such as high frequency switching, rectifiers and switches, high voltage rectification, and the like. The ST8812FP is also used and is suitable for applications requiring very low RDS(ON) and a low operating temperature.

Working Principle for the ST8812FP

The ST8812FP utilizes the basic working principle of bipolar junction transistors to operate in both the forward and reverse bias regions. In the forward active region, the transistor consists of two n-type semiconductor layers and one p-type semiconductor layer. The base and collector regions are joined together and the emitter region is joined to the source. When a current is applied to the base region, a current is also generated in the collector region and this current flow is known as the collector current or IC. The collector current can be controlled by varying the voltage applied to the base terminal.

In the reverse active region, the transistor consists of two p-type semiconductor layers and one n-type semiconductor layer. The collectors and emitters are joined together and the source is connected to the base. This is also known as the Reverse Bias Region, where the current gain is low but is still necessary for certain applications. The output voltage is generated as the current flow between the collector and the emitter increases.

The ST8812FP has a wide range of potential uses due to its wide range of potential applications. For example, it can be used to provide high current gain, high operating temperature and high switching speed, making it suitable for many applications. It can also be used for rectification and high frequency switching. It is a popular choice for many electronic circuit applications because of its low power consumption and high breakdown voltage.

The ST8812FP is one of the leading single bipolar junction transistors and is a popular choice in many high current applications. It is a two terminal device that operates in both the forward and reverse bias regions as well as providing high current gain and a low operating temperature. The output voltage of this device is generated as the current flow between the collector and the emitter increases. Due to its wide range of potential uses and its high performance, the ST8812FP is one of the most popular choices for circuit applications.

The specific data is subject to PDF, and the above content is for reference

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