STK12C68-5K55M

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The STK12C68-5K55M is a memory device from Sanyo Electronics. It is a 32-bit, 16-Mbit (2M x 8), single-port static random-access memory (SRAM). This SRAM uses 5K55M technology which is a fast-erasing and fast-writing memory technology. It is available in 13 package varieties and offers low power consumption, high speed access and excellent performance. The device is suitable for use in applications such as system caches, networking, and storage applications.

The 5K55M technology can deliver fast writing and fast erasing operations. It provides a very high-speed access time, less than half the time required for traditional memory technologies. It also offers excellent performance in low power consumption, which is necessary for today\'s high-speed, low power computing systems. The 5K55M technology enables devices to operate at lower operating voltages, which reduces the power consumption of the device.

The STK12C68-5K55M can be used in a variety of application fields. It is a great choice for high-speed, low-power systems, such as personal digital assistants (PDAs), notebook computers, and digital cameras. It is also ideal for a wide variety of storage applications, including system caches, databases, and storage appliances. Furthermore, it can be used in networking applications, such as routers and bridges.

The working principle of the STK12C68-5K55M is based on the 5K55M technology. It uses a single port SRAM cell with a fast write/read operation. This SRAM cell contains a word line voltage which is used to select the memory cell, a bit line voltage which is used to read and write data, and a control signal line for control signals. The write process is triggered by a write enable signal, which turns on the write current. This write current will establish a voltage across the memory cell, which will be read in the next read cycle.

The read process is triggered by a read enable signal, which turns on the read current. This read current will activate the sense amplifiers that will detect the voltage across the memory cell, which will be read. When the required data is read, the device will send out the appropriate control signals to indicate the data availability. The STK12C68-5K55M can also perform a write/erase operation, which is triggered by the write enable and erase enable signals, respectively. This write cycle will establish a write voltage across the memory cell, which will be read in the next read cycle. The erase cycle will erase the contents of the memory cell and a write enable signal will be sent out to reset the memory cell.

In conclusion, the STK12C68-5K55M is a 32-bit, 16-Mbit (2M x 8), single-port static random-access memory (SRAM) device from Sanyo Electronics. It uses 5K55M technology which is a fast-erasing and fast-writing memory technology. It is available in 13 package varieties and offers low power consumption, high speed access and excellent performance. The device is suitable for a variety of application fields, including high-speed, low-power systems, such as PDAs, notebook computers, digital cameras, storage applications, and networking applications. The working principle of the device is based on 5K55M technology and it uses a single port SRAM cell with a fast write/read operation.

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