Allicdata Part #: | STL051SC2DC240N-ND |
Manufacturer Part#: |
STL051SC2DC240N |
Price: | $ 301.05 |
Product Category: | Uncategorized |
Manufacturer: | TE Connectivity Aerospace, Defense and Marine |
Short Description: | STL051SC2DC240N = WDUALOBE |
More Detail: | N/A |
DataSheet: | STL051SC2DC240N Datasheet/PDF |
Quantity: | 1000 |
9999 +: | $ 273.68500 |
Series: | * |
Part Status: | Active |
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STL051SC2DC240N is a versatile component that provides different benefits for a variety of applications. This component is used in various fields due to its numerous advantageous features. It is primarily designed for high-frequency applications such as communications, audio, industrial, automotive, military, and aerospace.STL051SC2DC240N is composed of two transistors - a source follower N-channel MOSFET and a lateral PNP bipolar junction transistor (BJT). The gate of the MOSFET is connected to the collector of the BJT, while the drain of the MOSFET is connected to the emitter of the BJT. The source of the MOSFET is connected to the load, whereas the base of the BJT is connected to the gate of the MOSFET.The operating principle of STL051SC2DC240N is signalled as follows. When the voltage applied to the BJT\'s base is greater than the voltage applied to the MOSFET\'s drain, the BJT saturates and the MOSFET is turned on. This situation is known as "positive bias". At the same time, the voltage applied to the MOSFET\'s gate (Vg) is determined by the voltage drop across the BJT\'s emitter-collector junction. This voltage is referred to as the "body effect".When the voltage applied to the BJT\'s base is lower than the voltage applied to the MOSFET\'s drain, the BJT is cut off and the MOSFET is turned off. This situation is known as "negative bias". At the same time, the voltage applied to the MOSFET\'s gate (Vg) is determined by the voltage drop across the BJT\'s base-emitter junction. This voltage is referred to as the "forward body effect".Overall, the STL051SC2DC240N is widely used in a variety of applications due to its various features and benefits. Its main features include low power dissipation, high frequency operation, low reverse leakage, integrated protection, and high breakdown voltage.
The specific data is subject to PDF, and the above content is for reference
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