STN0214 Allicdata Electronics
Allicdata Part #:

497-12862-2-ND

Manufacturer Part#:

STN0214

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 1200V 0.2A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 1200V 200mA 1.6W Sur...
DataSheet: STN0214 datasheetSTN0214 Datasheet/PDF
Quantity: 1000
1 +: $ 0.18400
10 +: $ 0.17848
100 +: $ 0.17480
1000 +: $ 0.17112
10000 +: $ 0.16560
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 1200V
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V
Power - Max: 1.6W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: STN0214
Description

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STN0214 Application Field and Working PrincipleSTN0214 is a single bipolar junction transistor (BJT) that can be used in a variety of applications, including switches, amplifiers, RF power amplifiers, wideband amplifiers, and linear amplifiers. It has a great advantage of having a high gain-bandwidth product.The STN0214 transistor has a base, an emitter and a collector, as well as an internal isolation between them. The pin configurations are NPN type. The power dissipation of the transistor is Pdmax = 720mW, and the total power dissipation Pdmax = 1W.The base-collector (B-C) junction is reverse biased, so it does not conduct current. This ensures that the collector current remains constant. The base-emitter (B-E) junction is forward-biased, so it does conduct current. The current flowing through the B-E junction is controlled by the current flowing through the base-emitter junction.The collector-emitter (C-E) voltage is determined by the reverse-biased junction of B-C. The base-emitter junction, however, is forward-biased and contributes to the base storage time and increases the current gain.The working principle of STN0214 is as follows: when a small amount of base current is provided, it produces a large amount of collector current, which is then amplified and applied to the load. The gain of the BJT transistor is determined by the ratio of the collector current to the input base current. The gain is controlled by the base current and the DC current gain.The STN0214 can be used for a wide range of applications, ranging from switches and amplifiers to RF power amplifiers and linear amplifiers. It can be used as a switch in multi-stage power amplifiers, to provide a low voltage drop and low harmonic distortion. It can also be used in linear amplifiers to provide a higher current gain and a lower power dissipation. The linearity of the phased array system can be improved by using the STN0214. In addition, the gain-bandwidth product of the device is excellent, making it ideal for use in inductive loads and 8-V to 10-V circuit applications.

The specific data is subject to PDF, and the above content is for reference

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