STN83003 Allicdata Electronics
Allicdata Part #:

497-12274-2-ND

Manufacturer Part#:

STN83003

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 1.5A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 400V 1.5A 1.6W Surfa...
DataSheet: STN83003 datasheetSTN83003 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
Power - Max: 1.6W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: STN83003
Description

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STN83003 belongs to the category of single bipolar junction transistors (BJT). This type of transistor has three terminals, namely the base, collector, and emitter. BJT transistors provide current gain through the process of doping, the process of adding impurities to the semiconductor material.

The STN83003 is a NPN type transistor, meaning that when the base-emitter voltage is positive, current flows from the emitter to the collector. This type of transistor is most commonly used in low-power controlling applications, such as switching low-power amplifiers and driving loads like relays.

The STN83003 can operate over currents ranging from 0.1 to 10 mA and voltages from 1.2 to 40 V, with a maximum power dissipation of 100 mW. These transistors come with excellent linearity, low noise, and low distortion. This makes them an ideal choice for applications such as audio power amplification, mobile power amplifiers and wireless charging.

To understand the working principle of the STN83003, it is helpful to know the basics of BJTs and how they operate. BJTs, as mentioned earlier, are three-terminal devices composed of a base, collector and emitter. When a voltage is applied at the base, a small amount of current flows through the transistor, resulting in a larger current flowing between the collector and emitter. The type of current and the amount of current flowing between the collector and emitter are largely determined by the current gain, which is the ratio of the output current to the input current.

The process of current flow and current gain is known as the “active region” of a transistor. This is because when a voltage is applied between the base and emitter, a region is formed where electrons and holes are active in the flow of current. In the case of an NPN type of BJT, current flows from the emitter to the collector when its base is positively biased. The base current, in turn, controls the current flowing from the collector to the emitter. The current gain in this case is the ratio between the output current and the input current.

The STN83003 is a widely used transistor with a variety of applications, ranging from low power controlling amplifiers to driving loads like relays. Its excellent linearity, low noise, and low distortion make it an ideal choice for audio power amplification, mobile power amplifiers and wireless charging. Understanding the basics of BJTs is essential in order to get the most out of this type of transistor. With this knowledge, engineers can design reliable power circuits that meet their desired specifications.

The specific data is subject to PDF, and the above content is for reference

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