Name: STPS3045CT
Brand: STMicroelectronics
SKU: 497-2751-5-ND
Price: 1.17 USD
Availability: InStock

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STPS3045CT is an advanced high-current, high-temperature and high-reliability low-profile Super-Junction (SJ) MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) designed for high current, high temperature and very low RDS(on) applications. It is an excellent choice for a broad range of power management applications. This device integrates a high-voltage tunnel FET, an atomic-layer-deposition (ALD)-dielectric, a low-voltage MOSFET, and two high-voltage Schottky barrier diodes in a low-profile, thermally-enhanced 8-pin Mini-DPAK package.The STPS3045CT exhibits low total parasitic capacitance, which enables the component to operate at much higher frequencies than conventional power MOSFETs. In addition, it has excellent thermal performance and increased ruggedness, which enables the STPS3045CT to be used in demanding high-power and/or extreme environmental conditions. This device has a wide maximum junction temperature up to 150°C.

Application Field

The STPS3045CT is suitable for a variety of applications, such as:

Power converters
DC/DC converters
Off-line AC/DC converters
DC/AC converters
UPS systems
Synchronous rectification
Switch-mode power supplies (SMPS)
Orthogonal frequency division multiplexing (OFDM) applications
Wireless transmitters

Working Principle

The STPS3045CT is a low profile, thermally-enhanced 8-pin mini-DPAK package, which contains a high-voltage tunnel FET, an atomic-layer-deposition (ALD)-dielectric, a low-voltage MOSFET, and two high-voltage Schottky barrier diodes. It is designed to operate in a wide range of applications due to its low on-resistance, low gate charge (Qg), low overall capacitance, and improved switching performance. This device offers excellent device-level characteristics with respect to thermal performance, total parasitic capacitance, and fast switching speed.The MOSFET portion of the device allows for efficient power conversion by controlling the current flow between the source and drain at a greater efficiency than traditional linear components. When the gate voltage applied to the MOSFET is low, the current flow is blocked. As gate voltage increases, the resistance of the channel between the source and the drain decreases and more current can flow.The Schottky Diode enables the bi-directional flow of current in a circuit. The Schottky Diode can prevent the MOSFET from operating in the reverse polarity and thus protecting the circuit from damage. This is a very important feature in applications where the input voltage to the circuit can change polarity.The STPS3045CT offers improved performance at elevated temperatures due to its integrated ALD dielectric. ALD allows for a thinner gate dielectric resulting in lower gate charge, reduced overall capacitance, and improved switching performance. This device also offers excellent thermal performance and improved output characteristics, resulting in better power efficiency in higher power applications.

Allicdata Part #:	497-2751-5-ND
Manufacturer Part#:	STPS3045CT
Price:	$ 1.17
Product Category:	Discrete Semiconductor Products
Manufacturer:	STMicroelectronics
Short Description:	DIODE ARRAY SCHOTTKY 45V TO220AB
More Detail:	Diode Array 1 Pair Common Cathode Schottky 45V 15A...
DataSheet:	STPS3045CT Datasheet/PDF
Quantity:	1284

1 +:	$ 1.17000
10 +:	$ 1.13490
100 +:	$ 1.11150
1000 +:	$ 1.08810
10000 +:	$ 1.05300

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	45V
Current - Average Rectified (Io) (per Diode):	15A
Voltage - Forward (Vf) (Max) @ If:	570mV @ 15A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	200µA @ 45V
Operating Temperature - Junction:	200°C (Max)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Base Part Number:	STPS3045C

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497-2751-5-ND

STPS3045CT

Discrete Semiconductor Products

Application Field

Working Principle