STTH512B Allicdata Electronics
Allicdata Part #:

STTH512B-ND

Manufacturer Part#:

STTH512B

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: DIODE GEN PURP 1.2KV 5A DPAK
More Detail: Diode Standard 1200V 5A Surface Mount DPAK
DataSheet: STTH512B datasheetSTTH512B Datasheet/PDF
Quantity: 1000
1 +: $ 0.46000
10 +: $ 0.44620
100 +: $ 0.43700
1000 +: $ 0.42780
10000 +: $ 0.41400
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 95ns
Current - Reverse Leakage @ Vr: 5µA @ 1200V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Base Part Number: STTH512
Description

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Diodes - Rectifiers - Single is a type of semiconductor device characterized by allowing current to flow in one direction (forward bias) and blocking current from flowing in the opposite direction (reverse bias). The STTH512B is a single rectifier diode that is rated for 400V in forward bias and has a maximum peak disipación current of 6A and a maximum average rectified output current of 5A, and the semiconductor diode has a typical reverse current of 1mA at a reverse voltage of 10V. The STTH512B is suitable for use in high-frequency switch-mode power supplies and other circuit protection applications.

The working principle of the STTH512B is based on the PN junction, which is formed by p-type and n-type semiconductor materials that are joined together. The PN junction in the STTH512B has two main effects - the depletion zone and the diode forward voltage. The depletion zone is an area in between the p-type and n-type materials, and it is generated when the two materials are brought into contact. This depletion zone creates a potential barrier preventing current from flowing between the two materials. The diode forward voltage is the potential that must be applied to or across the PN junction in order for current to flow through it.

When the voltage across the PN junction is below the diode forward voltage, the junction behaves as an insulator and does not allow any current to flow. However, when the voltage across the PN junction is greater than the diode forward voltage, the junction is "forward biased" and current flows through it. When the PN junction is forward biased, the diode acts as a low-resistance path and allows current to flow.

The STTH512B semiconductor diode is designed to withstand the high levels of energy that occurs during electrical surges and power fluctuations. It is suited for many rectifier applications and is manufactured with a robust package to ensure its tolerability. It is also designed with a wide range of possible applications as it is suitable for both low and high power levels.

One major application of the STTH512B rectifier diode is in high-frequency switch-mode power supplies. These power supplies typically feature a rectifier circuit which convert alternating current (AC) voltages into direct current (DC) voltages. The rectifier circuit allows current to flow in one direction, and the STTH512B diode is a suitable component for this type of power supply.

Another application for the STTH512B diode can be found in circuit protection devices, most commonly fuse and varistor components. These devices limit the amount of current that can pass through a circuit, and can be used to protect the circuit from damages caused by overcurrent. The STTH512B rating is well suited for circuit protection applications as it has a maximum current rating that is much higher than other single rectifier diodes.

The STTH512B is a single rectifier diode that has a variety of applications in both high-frequency switch-mode power supplies and circuit protection devices. It is rated for 400V in forward bias and has a maximum peak disipación current of 6A and a maximum average rectified output current of 5A. The semiconductor diode is designed to withstand high levels of energy and has a robust package. Its versatility and usability make it an ideal choice for many rectifier and circuit protection applications.

The specific data is subject to PDF, and the above content is for reference

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