
Allicdata Part #: | STX715-AP-ND |
Manufacturer Part#: |
STX715-AP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 80V 1.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 1.5A 50MHz 900mW ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 1A, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92AP |
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Introduction
The STX715-AP is a bipolar transistor designed for high voltage applications. It is a single-package device with a collector-emitter breakdown voltage of 600V and a maximum collector current of 3 amperes. The STX715-AP is manufactured using advanced bipolar process technology and offers high performance and reliability.
Design Overview
The STX715-AP is designed to provide high switching speeds, low on-state resistance, and ruggedness. It has been designed to withstand a wide range of environmental conditions. It is suitable for both linear and switching applications. The device has a high Collector-Emitter saturation voltage of 0.2 V for currents up to 3 Amps.
Features
The STX715-AP has several features that make it well-suited for high voltage applications:
- High break-down voltage (600V) and reverse-current capability;
- Low voltage drop and low on-state resistance;
- High speed switching and low gate capacitance;
- Small footprint.
Applications
The STX715-AP is well-suited for a variety of applications, including high-voltage switching, power supplies, and power control in digital and analog circuits. It is also ideal for automotive, industrial, and consumer applications. It is also useful for applications such as motor speed control and non-isolated DC/DC converters.
Working Principle
The STX715-AP is a junction transistor, which means it consists of three layers of semi-conductive material, called n-type, p-type, and injetted layers. When a voltage is applied to the base (B) of the transistor, it allows current to flow from the collector (C) to the emitter (E). This current flow is controlled by the base voltage, which is typically much lower than the collector or emitter voltages.
The amount of current that can flow through the transistor is determined by the ratio of the base-emitter voltage to the current gain (or hfe) of the transistor, with a higher hfe allowing more current to flow. The transistor typically has a wide range of hfe ratings, typically 100 to 500.
The STX715-AP is also designed to provide excellent switching speeds, permitting rapid switching of large currents in high-voltage applications. The high breakdown voltage of the STX715-AP, combined with its small size, makes it ideal for powering systems that require high-voltage operation.
Conclusion
The STX715-AP is a high voltage bipolar transistor designed for a wide range of applications. It has a high breakdown voltage, low on-state resistance, and high switching speeds. It is suitable for both linear and switching applications, and has a wide range of industrial, automotive and consumer applications. Its small size, ruggedness, and high performance make it an ideal choice for high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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