STX817A

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STX817A is a single bipolar transistor (BJT) specifically designed for applications requiring very high power levels. It has an excellent high frequency and high voltage performance, making it ideal for high power applications. The device is suitable for use in linear and switching power supply, power amplifier, audio and video amplifier and other high frequency applications.

The STX817A is a transistor with a small signal gain (HFE) of 1500 and a frequency response of up to 1 MHz. The device features a low input capacitance (Ciss) of 7 pF and a high breakdown voltage (BV) of 500 V. The device’s package measures 3.0 x 3.0 x 0.8 inches (76.2 x 76.2 x 20.3 mm).

The STX817A features a typical hFE of 1500 which improves noise performance as well as power density and efficiency. The device has a wide range of gate leakage currents, from 0.2 to 3 uA, allowing it to be used with a wide range of power levels. The low output noise and good gain linearity make the STX817A a suitable choice for low noise designs.

The working principle of the STX817A is that of a typical bipolar transistor. In a bipolar transistor, one p-type semiconductor region is connected to a negative supply and one n-type semi-conductor region is connected to a positive supply. This creates a p-n junction, which controls current flow between the two terminals when a small current is applied to the control terminal (base electrode). The current flow is proportional to the base current.

The STX817A is capable of operating over a wide range of temperature and supply voltages, making it suitable for a variety of applications. The device’s high current capability and excellent thermal performance makes it an ideal choice for switching power supplies, high power amplifiers, and other demanding applications. Its personal, small size and low profile also make it ideal for use in space constrained applications.

The STX817A is a high quality, high performance transistor designed for applications requiring very high power levels. Its excellent high frequency and high voltage performance, low input capacitance, and high breakdown voltage make it an ideal choice for a wide range of demanding applications. Its wide range of gate leakage currents, low output noise, and good linearity make it suitable for low noise designs. The device’s small size, high current capability, and excellent thermal performance make it an ideal choice for switching power supplies, high power amplifiers, and other demanding applications.

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