SZ1SMA5939BT3G Discrete Semiconductor Products |
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Allicdata Part #: | SZ1SMA5939BT3GOSTR-ND |
Manufacturer Part#: |
SZ1SMA5939BT3G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 39V 1.5W SMA |
More Detail: | Zener Diode 39V 1.5W ±5% Surface Mount SMA |
DataSheet: | SZ1SMA5939BT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.15717 |
10000 +: | $ 0.15523 |
Specifications
Current - Reverse Leakage @ Vr: | 500nA @ 29.7V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 39V |
Tolerance: | ±5% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 45 Ohms |
Description
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Diodes - Zener - Single
The SZ1SMA5939BT3G series is a group of silicon, axial lead diodes and is part of a larger family of diodes from Opengate International which from part of the Vishay Semiconductor brand. These diodes are generally all similar in their application capacities and working principles.The application field for these diodes is wide and varied, including in high voltage applications and for voltage regulation. The high voltage applications include voltage transient surge suppressive and transient voltage suppressors. Voltage regulation applications, on the other hand, include voltage multipliers, voltage dividers and voltage limiters.The design of the SZ1SMA5939BT3G series is based around its PN junction, consisting of a semiconductor material with regions of different doping concentration. At the interface, or junction, between the types of doping, the carriers of one type are repelled to the other side. This causes an electric field to occur, creating a potential barrier.The working principle of a zener diode relies on the PN junction and its ability to produce variances in reverse bias beyond the avalanche breaking point. During this process, the increased electric field created at the junction will cause free electrons to be stripped off from the valence band of the semiconductor material, resulting in a high influx of current.The potential barrier created by the PN junction of a diode is responsible for the two main functions of the SZ1SMA5939BT3G series: switching and voltage regulation.Switching can occur when the PN junction is reverse-biased. During this process, the junction will support a certain level of voltage across it depending on the PN junction\'s "reverse breakdown voltage". If that voltage exceeds the threshold level, an avalanche breakdown will occur. This is when the current is multiplied manyfold and a large amount of energy is released, making the diode switch on.When used as a voltage regulator, the diode\'s PN junction will have established a "zener voltage". This is usually approximately the same as the diode\'s reverse breakdown voltage. This is useful for supplying a consistent voltage to circuitry, allowing for more precise voltage readings and voltage consistency.The SZ1SMA5939BT3G series of silicon diodes from Opengate International\'s Vishay Semiconductor range are a versatile family of components with. They have a wide range of applications such as high voltage applications, voltage regulation, voltage multipliers, voltage dividers, and voltage limiters. The working principle of these diodes lies in the ability of their PN junction to support a certain level of voltage across it that, when exceeded, causes an avalanche breakdown. This enables the diode to switch as well as to function as a voltage regulator.The specific data is subject to PDF, and the above content is for reference
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