SZ1SMB22AT3G Circuit Protection

TVS diodes are devices that are used in applications requiring protection from overvoltage transients. The SZ1SMB22AT3G is a bi-directional configuration of a TVS diode. It has a low clamping voltage and offers superior performance in high speed applications.

The SZ1SMB22AT3G is typically used in applications requiring protection from potential overvoltage conditions such as in communications, industrial, consumer and automotive electronic devices. It is also used in cable protection applications, such as USB, HDMI and Ethernet cables, where its bi-directional capability can effectively protect from static charges.

The SZ1SMB22AT3G offers extremely low maximum let-through voltage and fast response time. It is designed to provide protection from voltage transients, and is capable of withstanding repetitive ESD strikes of up to ±30kV contact discharge. Additionally, it offers a high peak pulse-power of 1kW (10/1000µs) with a maximum clamping voltage of 23 V.

The SZ1SMB22AT3G has an inspiration-level breakdown voltage of 28 V and a peak-pulse current of 22 A. It offers very low capacitance and can be used in high frequency circuits. It is also RoHS compliant.

The working principle of the SZ1SMB22AT3G TVS diode is based on avalanche breakdown. Avalanche breakdown occurs when carriers, such as electrons or holes, gain sufficient kinetic energy due to an applied electric field, and collide with ions to generate additional carriers. In the SZ1SMB22AT3G, when an overvoltage is applied, the applied electric field increases and carriers gain sufficient energy to cause avalanche breakdown. This breakdown shortens the high voltage transient and prevents it from damaging the circuit.

The SZ1SMB22AT3G is a highly reliable TVS diode that is suitable for use in advanced electronic applications. It offers superior protection against overvoltage transients, and its low clamping voltage and fast response time make it perfect for high speed applications.