SZ1SMB5949BT3G Allicdata Electronics
Allicdata Part #:

SZ1SMB5949BT3G-ND

Manufacturer Part#:

SZ1SMB5949BT3G

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 100V 550MW SMB
More Detail: Zener Diode 100V 550mW ±5% Surface Mount SMB
DataSheet: SZ1SMB5949BT3G datasheetSZ1SMB5949BT3G Datasheet/PDF
Quantity: 1000
2500 +: $ 0.14771
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 550mW
Impedance (Max) (Zzt): 250 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 76V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Description

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The SZ1SMB5949BT3G is a single, packaged 84V zener diode commonly used in a variety of applications. It is a component of the Zeners and Rectifiers selection of a larger component offerings in the electronics industry. This diode is well-suited for providing both surge current protection and long lasting power operations.

SZ1SMB5949BT3G is unique in that its structure takes the form of a parallel diode structure which contains two diodes connected in opposite directions. This provides superior current resistance in addition to providing superior reverse voltage breakdown abilities. This makes the SZ1SMB5949BT3G ideal for use where the application requires a high level of current resistance, such as in power supplies, automotive and military applications.

The SZ1SMB5949BT3G consists of two P and N-type layers that are linked together in a mirror-image pattern. This reverse breakdown of the P and N-type layers is voltage-dependent and allows the SZ1SMB5949BT3G to regulate the current passing through it, thus protecting other components and circuits in the application.

When a reverse voltage is applied to the SZ1SMB5949BT3G diode, the electrons flow in a direction opposite to the expected electrical flow. This reverse current causes the diode to break down and the voltage across the device increases exponentially. This exponential increase has some interesting properties which make it ideal for surges, where the voltage might rise quickly, or for providing a short duration current to other circuits.

The SZ1SMB5949BT3G is also capable of withstanding higher operating voltages than other single diode components. This ability to handle high voltages makes it ideal for applications such as automotive, where the operating voltages are often much more than the specified limit for standard diodes. In addition, due to its relatively low on-state resistance, the SZ1SMB5949BT3G has excellent power handling capabilities.

The SZ1SMB5949BT3G is an ideal choice for applications where reverse breakdown protection is required, such as in power supplies and automotive intervals. Its property of high reverse breakdown and low on-state resistance makes it an excellent choice for applications that need both current protection and long lasting power operations. Its ability to withstand high pressures and temperature make it ideal for livelier applications, such as those in the military.

The specific data is subject to PDF, and the above content is for reference

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