SZMM3Z16VST1G Allicdata Electronics

SZMM3Z16VST1G Discrete Semiconductor Products

Allicdata Part #:

SZMM3Z16VST1GOSTR-ND

Manufacturer Part#:

SZMM3Z16VST1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 16.18V 300MW SOD323
More Detail: Zener Diode 16.18V 300mW ±2% Surface Mount SOD-323
DataSheet: SZMM3Z16VST1G datasheetSZMM3Z16VST1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04631
6000 +: $ 0.04167
15000 +: $ 0.03704
30000 +: $ 0.03473
75000 +: $ 0.03087
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 16.18V
Tolerance: ±2%
Power - Max: 300mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 11.2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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Diodes are semiconductors which are designed to allow an electrical current to flow in one direction while blocking the current from flowing in the opposite direction. They can be used in a variety of applications from basic on-off switching to voltage regulation and voltage switching mechanisms. The SZMM3Z16VST1G is a single Zener diode which is specifically designed for use in voltage regulation and switching applications. This article will discuss the application field and working principle of the SZMM3Z16VST1G.

The SZMM3Z16VST1G is a single Zener diode which is specifically designed for use in voltage regulation and switching applications where a low power and a low forward voltage drop are required. This diode is available in the SOD-323 surface-mount package and is designed to provide the same level of protection against reversed and over-voltage spikes as the larger Diode Zener components. The SZMM3Z16VST1G has a low power and a low forward voltage drop, which makes it ideal for applications such as circuit protection, voltage switching and voltage regulation.

The SZMM3Z16VST1G is a Zener diode, which means it is constructed from two layers of P- and N-type semiconductors. This construction creates a junction where the P-type layer and N-type layer come together, and it is this junction that allows the current to flow in one direction while blocking the current from flowing in the opposite direction. The SZMM3Z16VST1G\'s maximum reverse breakdown voltage is 16V, and its maximum power rating is 0.25W. This makes it suitable for controlling and regulating voltages in small circuits.

The working principle of the SZMM3Z16VST1G is quite simple. When an electrical current passes through the SZMM3Z16VST1G, it will create an electric field, in which electrons from the N-type layer will be attracted towards the P-type layer. As the electrons move towards the P-type layer, a voltage potential is created across the diode\'s terminals, which is referred to as the Zener voltage. As soon as the Zener voltage is reached, the current is blocked from flowing in the opposite direction and only flows in the forward direction. This prevents surged voltages from dissipating in the wrong direction and helps to protect the circuit from potential damage.

The SZMM3Z16VST1G can be used in a wide range of applications, including circuit protection, voltage regulating, switching and various EMI/RFI applications. The diode can also be used in portable electronic equipment, medical devices, and automotive systems such as airbag control units. In addition, the SZMM3Z16VST1G can also be used in automotive alternators to prevent overloads.

In summary, the SZMM3Z16VST1G is a single Zener diode which is specifically designed for use in voltage regulation and switching applications. It is constructed from two layers of P- and N-type semiconductors, and has a low power rating and a low forward voltage drop. Its maximum reverse breakdown voltage is 16V, and it can be used in a wide range of applications, from circuit protection and voltage regulation to EMI/RFI applications. The working principle of the SZMM3Z16VST1G is based on the electric field which is created between the P-type layer and the N-type layer. This electric field will create a Zener voltage potential across the terminals, which effectively blocks the current from flowing in the opposite direction, thus protecting the circuit from potential damage.

The specific data is subject to PDF, and the above content is for reference

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