SZMMBZ5231BLT1G Allicdata Electronics

SZMMBZ5231BLT1G Discrete Semiconductor Products

Allicdata Part #:

SZMMBZ5231BLT1GOSTR-ND

Manufacturer Part#:

SZMMBZ5231BLT1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 5.1V 225MW SOT23-3
More Detail: Zener Diode 5.1V 225mW ±5% Surface Mount SOT-23-3 ...
DataSheet: SZMMBZ5231BLT1G datasheetSZMMBZ5231BLT1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04366
6000 +: $ 0.03929
15000 +: $ 0.03493
30000 +: $ 0.03275
75000 +: $ 0.02911
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±5%
Power - Max: 225mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBZ5231B
Description

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SZMMBZ5231BLT1G is a single Zener diode with a typical Zener voltage of 7.5V. It is fabricated in a miniature SOT223 package and is designed to protect high speed and sensitive circuit components from voltage fluctuations. This particular diode is designed particularly to work in a wide range of operating conditions and is suitable for high reliability applications.

The working principle of a Zener diode is based on the fact that, when operated in its reverse breakdown region, it exhibits a quite consistent voltage drop across it. That voltage drop across the diode is due to a phenomenon known as avalanche breakdown. This breakdown is caused when the electric field generated by the applied voltage in the diode exceeds the dielectric strength of the device. When the avalanche breakdown occurs, the Zener diode keeps the voltage drop across the diode to a fixed value, which is known as its Zener voltage.

The SZMMBZ5231BLT1G diode can be used in a variety of applications that range from suppressing voltage noise spikes in data transmission systems to protecting circuit components from overvoltage conditions in automotive and industrial electrical systems. It can be used in a reverse protection configuration to protect high speed and sensitive devices from voltage transients, as well as in overvoltage protection circuits. The device is designed to work in harsh working conditions, such as high temperatures and high transient voltages, and is suitable for high reliability applications.

For example, the diode can be used in the overvoltage section of a power supply, to prevent the voltage across the output device from exceeding the maximum specified value. If the overvoltage is detected, the diode will enter its reverse breakdown region, and the voltage dropped across it will protect the output device from an excessive voltage surge.

In addition, the SZMMBZ5231BLT1G can be used in data transmission systems to protect from voltage overloads that could damage delicate devices. When the voltage surge exceeds a predetermined level, the diode will enter its reverse breakdown region and clamp the voltage at the Zener voltage level, protecting the circuit components from damage.

The SZMMBZ5231BLT1G diode\'s wide range of applications and high reliability make it a popular choice for a variety of electronic systems. The device is an ideal choice for overvoltage and noise protection applications, as well as for high temperature, high speed and high reliability applications.

The specific data is subject to PDF, and the above content is for reference

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