Allicdata Part #: | SZMMSZ12T3GOSTR-ND |
Manufacturer Part#: |
SZMMSZ12T3G |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 12V 500MW SOD123 |
More Detail: | Zener Diode 12V 500mW ±5% Surface Mount SOD-123 |
DataSheet: | SZMMSZ12T3G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02744 |
30000 +: | $ 0.02582 |
50000 +: | $ 0.02421 |
100000 +: | $ 0.02152 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 8V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Base Part Number: | MMSZ12 |
Description
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IntroductionThe SZMMSZ12T3G is an Inhibit Diode Zener single contained in a 1206 package and rated for 12V and 1.3 Watt. It provides a reliable short circuit protection and ESD protection. It is a compact size, low power, high performance inhibition diode.ApplicationsThe SZMMSZ12T3G diode is typically used for ESD protection and circuit protection in a wide variety of applications. Some of which include protection of FETs (Field-Effect Transistors), MOSFETs (Metal-Oxide-Semiconductor FET), and IGBTs (Insulated Gate Bipolar Transistors). It can be used for protecting LED (light emitting diode) and Touch Screen control circuits. Additionally it provides protection for line and power switch circuits in such items such as power supplies, electronic toys, and small motors.Working PrincipleA Zener diode works by regulating the voltage it is exposed to. When the voltage is below the Zener voltage it does not conduct, however when the voltage exceeds the Zener voltage then it begins to conduct and the current will remain constant. This is called the breakdown voltage.The SZMMSZ12T3G diode is a reverse conduction diode that uses a combination of P and N layers to control the Zener breakdown voltage. When connected in reverse polarity, a small current flows through the diode and its breakdown voltage is realized. This breakdown voltage stabilizes the operating voltage and reduces voltage spikes and fluctuations.ConclusionThe SZMMSZ12T3G diode is a high performance, low power, and high breakdown voltage diode. It is used for ESD protection and circuit protection in a variety of applications. The diode works by controlling the voltage it is exposed to, and using a combination of P and N layers to create the Zener breakdown voltage. This combination ensures that the voltage is stabilized, and reduces voltage spikes and fluctuations.The specific data is subject to PDF, and the above content is for reference
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