SZNZ3F2V4T1G

The diode SZNZ3F2V4T1G is a single-element zener diode, which finds applications in low voltage voltage regulation and in protection circuits.

The SZNZ3F2V4T1G is a silicon planar power zener diode that has been specifically designed for use as a voltage regulator. It is constructed with two diodes built on a single chip. The diodes are manufactured with a P-N junction and avionics, and are capable of the lowest possible on-state voltage. The device is rated at a maximum power dissipation of 250 milliwatts and a maximum reverse breakdown voltage of 4.2 volts.

The SZNZ3F2V4T1G is designed for low voltage applications, such as battery powered devices. It is useful for providing an available reference voltage in voltage regulators, power supplies and other power-sensitive electronics applications. It can also be used in low voltage protection circuits, over-voltage protection, and clamping applications.

The SZNZ3F2V4T1G is designed to function according to the principle of reverse breakdown, which is a form of the diode\'s voltage-current relationship. The continual current flow through the diode is limited by its reverse breakdown voltage. This voltage is the nominal voltage at which the device begins to conduct in the reverse-biased direction.

When there is no voltage across the diode, it is said to be ‘open’ or ‘off’. When a voltage is applied to the anode of the diode, it begins to conduct current in the positive direction. The amount of current that can be passed through the diode is restricted by the device’s maximum rated current value.

When the voltage across the diode rises to its reverse breakdown voltage, it begins to conduct current in the reverse direction. This current is limited by the device’s maximum reverse value. As the reverse breakdown voltage is reached, the drain current increases rapidly as the voltage across the device is increased.

The SZNZ3F2V4T1G is designed for a compact design, and can be used for wide range of applications. Its temperature characteristics are superior compared to other competing devices and its reverse current is extremely low (< 1mA) even under extreme conditions. In addition, it also has a very low forward voltage drop and is ideal for use in low voltage applications.