SZP6SMB130AT3G

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TVS-Diodes are used in many electronic applications in order to protect delicate equipment from excessive voltage transients and transient-related damage. The SZP6SMB130AT3G is one such device, and it is designed specifically for protecting sensitive electronic components from overvoltage, voltage transients, and electrostatic discharges (ESD).

Application Field
The SZP6SMB130AT3G is a unidirectional TVS diode used to protect equipment from ESD, overvoltage transients, and other electrical disturbances. It is commonly used in applications where low let-through voltage and high peak pulse power are required. This includes medical equipment, industrial and automotive systems, and consumer electronics. The device is also ideal for protecting components such as transistors, integrated circuits, and MOSFETs from electrical disturbances.

Working Principle
The SZP6SMB130AT3G TVS diode has a low forward voltage of 7.5V and can handle up to 130A peak pulse power. It also has an ultra-low let-through voltage of <0.2V for enhanced protection. The device is designed to clip transients to a safe level and then quickly dissipate the excess energy. This process acts as a “clamp” that prevents the transients from reaching the sensitive components. This ensures that the protected electronics stay within the voltage limits specified by its manufacturer.

The SZP6SMB130AT3G is specially designed to operate in harsh electrical environments with a high ESD level. It also has a high surge current rating and is able to withstand prolonged exposure to high voltage transients. The device is designed with an extra-wide SOA (Safe Operating Area) which ensures low power dissipation and low thermal stress. This ensures a longer service life and increased reliability.

The SZP6SMB130AT3G is constructed with a surge-resistant polymer material which helps to reduce the overall component size and weight. This helps to reduce the manufacturer’s cost and time during PCB fabrication. The device also features a glass-passivated junction which helps to protect the diode from damage caused by high energy transients.

The SZP6SMB130AT3G is an excellent choice for high power applications that require enhanced protection against ESD and voltage transients. Its low forward voltage and high peak pulse power ensure effective protection for sensitive electronic components. Its compact design also helps to reduce the overall cost and time for PCB fabrication. Additionally, its surge-resistant polymer construction and glass-passivation junction provides an extra layer of protection and ensures a longer service life.

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