T600121804BT

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Off State:	1.2kV
Voltage - Gate Trigger (Vgt) (Max):	3V
Current - Gate Trigger (Igt) (Max):	150mA
Voltage - On State (Vtm) (Max):	1.55V
Current - On State (It (AV)) (Max):	175A
Current - On State (It (RMS)) (Max):	275A
Current - Off State (Max):	25mA
Current - Non Rep. Surge 50, 60Hz (Itsm):	5000A, 5500A
SCR Type:	Standard Recovery
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis, Stud Mount
Package / Case:	TO-209AB, TO-93-4, Stud
Supplier Device Package:	--

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Thyristors - SCRs: T600121804BT Application Field and Working Principle

A thyristor or silicon-controlled-rectifier (SCR) is a multilayer semiconductor component that uses a three- or four- layer structure and is able to act as an electronic switch. A thyristor is commonly used to control the flow of electric current or to protect circuits or machinery from overload or a power outage. The T600121804BT is designed and manufactured by a leading semiconductor manufacturer, and is specifically designed for use in power electronics and semiconductor application.The T600121804BT is a four-layer SCR with a reverse-recovery current capability of 600 Amps and a peak repetitive off-state voltage of 1200 Volts, making it one of the most powerful SCRs available on the market today. It is also rated for a peak one-off and one-hundred service life of 8 and 1000 hours, respectively, making it extremely reliable in operation.The T600121804BT is widely used in many different applications, such as electric power control, lighting control and motor control. It is also used in AC standby power systems, UPS power systems, network power systems and uninterruptible power supplies. It is known for its stable performance in a wide range of conditions and for its ability to withstand high current and voltage surges.The T600121804BT is composed of a four-layer structure which consists of three main layers. The first layer is the gate layer, which is a thin film of polycrystalline silicon, and it provides the control of current flow to the SCR. The second layer is the base layer, which consists of a combination of different materials including silicon nitride, polysilicon and polycrystalline layers. The third layer is the collector layer, which is designed to be an efficient channel between the gate and base layers.The working principle of the T600121804BT is based on the effect of the positive and negative half-cycles of the line voltage. When the positive half-cycle of the line voltage is applied to the gate, the T600121804BT turns ON, which results in current flow from the base to the collector and thus from the load to the gate through the diode. When the negative half-cycle of the line voltage is applied the T600121804BT turns OFF, which is the reverse-recovery process. It is this process that enables the T600121804BT to turn ON and OFF quickly, enabling it to switch current flows accurately and swiftly.In conclusion, the T600121804BT is an innovative semiconductor SCR that is specifically designed and manufactured for use in power electronics and semiconductor applications. It is composed of a four-layer structure which provides the control of current flow and enables the reverse-recovery process. The T600121804BT is known for its stable performance in a wide range of conditions and for its ability to withstand high current and voltage surges. It is widely used in many different applications such as electric power control, lighting control and motor control, making it a valuable asset for many types of businesses.

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