T620122004DN Allicdata Electronics

T620122004DN Discrete Semiconductor Products

Allicdata Part #:

T620122004DN-ND

Manufacturer Part#:

T620122004DN

Price: $ 44.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: SCR PHASE CTRL MOD 1200V 200A
More Detail: SCR Module 1.2kV 315A Single Chassis Mount, 8" Wir...
DataSheet: T620122004DN datasheetT620122004DN Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
30 +: $ 40.37290
Stock 1000Can Ship Immediately
$ 44.41
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 1.2kV
Current - On State (It (AV)) (Max): 200A
Current - On State (It (RMS)) (Max): 315A
Voltage - Gate Trigger (Vgt) (Max): 3V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3650A, 4000A
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount, 8" Wire Lead
Package / Case: TO-200AB, A-PUK
Description

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T620122004DN application field and working principle

Thyristors are a type of semiconductor device whose purpose is to control and regulate electrical current, and are often used in power systems and other high-power applications. The SCR (silicon controlled rectifier) is a specific type of thyristor, and is composed of two p-type layers sandwiching an n-type layer, forming a three-layer PN structure. The T620122004DN is a specific type of SCR module, and as such is often used in various power electronics applications.

The T620122004DN module is a widely-used SCR, and is popular for its low on-state voltage drop, low junction capacitance, and high power rating. Additionally, the T620122004DN has a high trigger current capability and fast switching times. The module can be used in AC and DC applications and in high-voltage and/or high-current systems.

The working principle of the T620122004DN module is based on the same principles of other thyristors and SCRs. In an SCR, the three-layer PN structure allows for the flow of current from the anode to the cathode only when it receives a suitable triggering voltage; without this voltage, the device will remain in its “off” state and no current will flow. When sufficient voltage is applied, it will cause a “forward breakdown” of the junction and allow current to flow through it. The current will then continue to flow until the voltage is reduced or removed, which will cause the junction to switch back to its “off” state.

In the case of the T620122004DN module, the principles of operation are the same as those of other thyristors and SCRs. The primary difference is that the module is designed to handle multiple SCRs in parallel, thus providing higher current and power ratings than a single SCR. This is especially useful when dealing with high-power applications such as solar power converters and DC motor drives, where multiple SCRs are necessary to handle high currents.

In summary, the T620122004DN module is a popular SCR module that is used in various power electronics applications. This module is capable of providing high power ratings and low junction capacitances, as well as fast switching times. The module is designed to handle multiple SCRs in parallel, making it ideal for high-power applications. The working principle of the T620122004DN is the same as other thyristors and SCRs, where a suitable triggering voltage causes a forward breakdown of the junction, allowing current to flow through until the voltage is reduced or removed.

The specific data is subject to PDF, and the above content is for reference

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