Allicdata Part #: | T70HFL10S02-ND |
Manufacturer Part#: |
T70HFL10S02 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 70A D-55 |
More Detail: | Diode Standard 100V 70A Chassis Mount D-55 |
DataSheet: | T70HFL10S02 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 70A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Current - Reverse Leakage @ Vr: | 100µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | D-55 T-Module |
Supplier Device Package: | D-55 |
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Diodes have many applications, one of them being rectifiers. In particular, the T70HFL10S02 diode is a fast-recovery type rectifier with a high forward surge current rating.
This diode belongs to the single diode rectifier category, which is composed of a single diode with a minimum number of external components. It is widely used in high-frequency electrical circuits such as in switching power supplies, radio-frequency amplifiers, and even volatile memory circuits.
The T70HFL10S02 is a silicon-based device, with a rated minimum reverse voltage of 800V and a surge current rating of 10A. The device also has a peak repetitive reverse voltage of 700V, a repetitive reverse current rating of 25mA and an operating temperature ranging from -55°C to 150°C. Its peak forward surge current rating is 240A, making it ideal for a wide range of applications.
In terms of working principle, the T70HFL10S02 operates on a principle known as the “tunneling effect”. In this effect, electrons in the crystal lattice of the material are pushed through a barrier – in this case, the silicon-based material in the diode.When a positive voltage is applied to the diode, it will become forward biased and current will flow through it.When a negative voltage is applied, it will become reverse biased and current will not flow through it.
The tunneling effect is also responsible for the fast recovery time of the T70HFL10S02. This is because it allows electrons in the crystal lattice to rapidly restore their original positions after the forward voltage is removed. This allows the diode to quickly revert to its reverse biased state, thus allowing it to respond quickly to dynamic electrical signals.
The T70HFL10S02 diode is very useful in a variety of applications, ranging from power supplies and RF amplifiers to volatile memory systems. Its fast recovery time makes it suitable for pulse-width modulation schemes, high frequency switching applications, DC-DC convertors, and so on. Its ability to handle high surge currents also makes it suitable for applications in high-power circuits.
In conclusion, the T70HFL10S02 diode is a single, fast-recovery rectifier that operates on the tunneling effect. It is well suited for a variety of high-frequency applications and its ability to handle high surge currents make it ideal for high-power circuits.
All in all, the T70HFL10S02 is a versatile device that is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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