Allicdata Part #: | T72H024854DN-ND |
Manufacturer Part#: |
T72H024854DN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | SCR FAST SW 475A 200V TO-200AC |
More Detail: | SCR 200V 750A Standard Recovery Stud Mount T-72 |
DataSheet: | T72H024854DN Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Voltage - Off State: | 200V |
Voltage - Gate Trigger (Vgt) (Max): | 3V |
Current - Gate Trigger (Igt) (Max): | 150mA |
Voltage - On State (Vtm) (Max): | 1.55V |
Current - On State (It (AV)) (Max): | 475A |
Current - On State (It (RMS)) (Max): | 750A |
Current - Off State (Max): | 35mA |
Current - Non Rep. Surge 50, 60Hz (Itsm): | 8000A @ 60Hz |
SCR Type: | Standard Recovery |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Stud Mount |
Package / Case: | SC-20, Stud |
Supplier Device Package: | T-72 |
Description
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Thyristors - SCRs are a type of solid-state power switch designed for both AC and DC control. They control the switching of power through current by maintaining a blocking state until certain conditions are met, allowing a very precise, reliable power control. The T72H024854DN is a silicon controlled rectifier, or SCR, with a nominal holding current of 0-25A, a forward blocking voltage of 400-600V, and a nominal gates triggering current of 1mA. It is specially designed to be used as a power switching element in motor and industrial control applications.The T72H024854DN is a four-layer device formed primarily of P-type or N-type semiconductor material in a dual-diffused junction arrangement. The device contains two main parts: the main two-layer junction that constitutes the main conducting element, and the gate junction which is responsible for controlling the current flowing through the device. When the gate junction is positively biased, the SCR acts as an open circuit, allowing any current to pass through. Conversely, when the gate junction is not biased, the SCR acts as a closed circuit and blocks any further current from passing through.The main two-layer junction is made up of a P-type section and an N-type section, combined using doping techniques to form a PNPN configuration. The doping process adds impurity elements, such as boron, to the silicon crystals to form the N and P regions. The P and N junctions are separated by a passivation layer which prevents electrical conduction. The gate junction is formed by reverse biasing the PNPN structure, thus enabling it to be opened or closed, depending on the biasing voltage applied.The T72H024854DN is used mainly in motor and industrial control applications, such as transformers, heated containers, pumps and lighting control. The device can also be used in high voltage and power isolated applications, as well as rectifier circuits. The T72H024854DN is capable of withstanding high peak voltages, high surge currents and high dv/dt rates, which makes it ideal for handling high power loads.When using the T72H024854DN, the user must ensure that the device is connected correctly so that it triggers in the correct direction. This is done by connecting the gates of the SCR directly to the source of the voltage, be it AC or DC, that is needed to trigger the device.The T72H024854DN is a highly reliable and easy to use device that provides durable and precise control of power switching. Its wide range of operating temperature, from -20 to +85 degrees Celsius, makes it suitable for applications in a variety of environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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