T72H104564DN Allicdata Electronics
Allicdata Part #:

T72H104564DN-ND

Manufacturer Part#:

T72H104564DN

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: SCR FAST SW 450A 1000V TO-200AC
More Detail: SCR 1kV 700A Standard Recovery Stud Mount T-72
DataSheet: T72H104564DN datasheetT72H104564DN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Voltage - Off State: 1kV
Voltage - Gate Trigger (Vgt) (Max): 3V
Current - Gate Trigger (Igt) (Max): 150mA
Voltage - On State (Vtm) (Max): 2.3V
Current - On State (It (AV)) (Max): 450A
Current - On State (It (RMS)) (Max): 700A
Current - Off State (Max): 35mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A @ 60Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Stud Mount
Package / Case: SC-20, Stud
Supplier Device Package: T-72
Description

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Thyristors - SCRs (Silicon Controlled Rectifier) are solid-state devices which are able to rapidly switch large amounts of current in electrical and electronic circuits. The T72H104564DN is a 40 Amp, 600 Volt, dual SCR that has a wide variety of applications and is a very popular choice for those dealing with high power switching applications such as industrial power supplies, DC-AC inverters, and motor controllers.

The T72H104564DN has two SCR channels and requires two independent gate signals to trigger them both simultaneously. Each gate requires a negative gate current of at least 15mA while the maximum gate voltage is 10V with a voltage drop of less than 1V once the two devices are triggered. Each SCR channel features an ultra-low trigger current of 1.5mA and an average on-state current of 40A with a peak value of 60A for 2 seconds.

The T72H104564DN is a very popular SCR device due to its wide application field, high reliability, and dual-channel functionality. Its most common applications are motor control, switch mode power supplies, automated equipment, AC-DC Rectification, DC-AC conversion, industrial processes, UPS systems, and lighting displays. Its combination of high ratings, low leakage current, a low on-state voltage drop, and ultra-low trigger current makes it perfect for these types of applications.

The T72H104564DN\'s working principle is based on a three-layer semiconductor structure. This three-layer structure is composed of an anode layer, a cathode layer, and a gate layer. The gate layer consists of a gate electrode and a gate oxide layer. When a negative gate voltage is applied to the gate, it creates an electric field that causes the electrons to pass through the gate oxide layer and into the anode. This in turn creates a conductive path between the anode and cathode and allows current flow between the two.

The T72H104564DN has a number of advantages over other types of power switching devices. Due to its ultra-low trigger current, the device is capable of working with minimal gate current and offers a high input-to-output control ratio. Additionally, the SCR does not have the same thermal losses as BJTs (bipolar junction transistors) since it does not require additional base current to turn on. This makes the device highly reliable in applications where the load changes frequently, making it ideal for use in motor control and other applications.

In conclusion, the T72H104564DN is a versatile SCR suitable for a wide range of high power switching applications. Its combination of high ratings, low leakage current, a low on-state voltage drop, and an ultra-low trigger current make it an ideal choice for those dealing with motor control and other applications that require high power switching.

The specific data is subject to PDF, and the above content is for reference

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