T72H0445B4DN Allicdata Electronics
Allicdata Part #:

T72H0445B4DN-ND

Manufacturer Part#:

T72H0445B4DN

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: SCR FAST SW 450A 400V TO-200AC
More Detail: SCR 400V 700A Standard Recovery Stud Mount T-72
DataSheet: T72H0445B4DN datasheetT72H0445B4DN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Voltage - Off State: 400V
Voltage - Gate Trigger (Vgt) (Max): 3V
Current - Gate Trigger (Igt) (Max): 150mA
Voltage - On State (Vtm) (Max): 2.3V
Current - On State (It (AV)) (Max): 450A
Current - On State (It (RMS)) (Max): 700A
Current - Off State (Max): 35mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A @ 60Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Stud Mount
Package / Case: SC-20, Stud
Supplier Device Package: T-72
Description

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Thyristors - SCRs are a type of electronic component that can be used in many applications, from simple switching and power control to high-power switching, including those used to control high voltage and high current applications. One of the most commonly used varieties of SCRs is the T72H0445B4DN. This article will explain the application field and working principle of this specific type of thyristor.

Application Field

The T72H0445B4DN is suitable for use in a wide variety of applications, including switching, converter and inverter circuits, overvoltage protection, and many more. It is most commonly used in applications that require a very high level of reliability and durability, such as industrial environments, as it is designed to be resilient against harsh conditions like extreme temperature and humidity. Additionally, the device is capable of handling both low and high frequencies, allowing for a very wide range of applications.

Working Principle

The T72H0445B4DN is a four-layer thyristor which is able to switch high currents in a controlled manner. The thyristor consists of four layers of crystals: a control layer, an anode layer, a cathode layer, and a gate layer. In order to activate the thyristor, a voltage is applied between the anode and gate terminals. This causes the electrons in the anode layer to move towards the gate terminal while the hole concentration in the gate terminal increases.

This change creates a region of large potential difference, leading to the formation of a junction between the anode and gate layers. This junction allows electrons to flow from the anode to the gate layer and thus activate the T72H0445B4DN. Once the thyristor is activated, current can flow from the anode to the cathode layer and remain on until the voltage between the anode and gate terminals is removed.

Conclusion

The T72H0445B4DN is a highly dependable and reliable component that can be used in a variety of applications. It is most commonly used in industrial settings, as it is designed to be resilient in harsh environments. It is also capable of handling low and high frequencies. The working principle of the component relies on the formation of a junction between the anode and gate layers, and an applied voltage between these layers is necessary for activation.

The specific data is subject to PDF, and the above content is for reference

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