TA6F11AHM3/6B

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TVS - Diodes are an important class of semiconductor components in the field of electronics. They are used to protect electronic circuits, equipment, and systems from electrical overstress (EOS) caused by transient voltage and current events. The TA6F11AHM3/6B is a unidirectional device that is designed to protect sensitive components against ESD.

The TA6F11AHM3/6B is a silicon avalanche junction diode with an integral electrostatic discharge (ESD) protection diode. It is a two-terminal device with a Ground pin and an Anode pin. The device has a Voltage Suppression Level (VSL) of 6V and can safely dissipate an energy of 14.5A in peak pulse current(IPP).

The TA6F11AHM3/6B is commonly used in applications such as data communication equipment, personal computers, mobile phones, PDA\'s, and automotive navigation systems. It can be used in applications that are subjected to surges and electrical overstress due to ESD and lightning strikes. The device has a low capacitance and fast response time, making it an ideal choice for protection from transient voltages.

The TA6F11AHM3/6B works by using an avalanche junction diode. When a high voltage surge is applied to the anode pin, the PN junction of the diode breaks down and starts to conduct current. This current is carried through the device and is dissipated as heat. This is what protects the sensitive electronics from damage due to electrical overstress.

The TA6F11AHM3/6B is a reliable and cost-effective device that is widely used in many applications. It is an excellent choice for protecting sensitive electronics from transient voltage and current events. The device is designed to be easy to install and requires minimal maintenance.

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