Allicdata Part #: | TA6F27AHM3/6B-ND |
Manufacturer Part#: |
TA6F27AHM3/6B |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 23.1V 37.5V DO221AC |
More Detail: | N/A |
DataSheet: | TA6F27AHM3/6B Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 37.5V |
Supplier Device Package: | DO-221AC (SlimSMA) |
Package / Case: | DO-221AC, SMA Flat Leads |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 185°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 16A |
Series: | Automotive, AEC-Q101, PAR® |
Voltage - Breakdown (Min): | 25.7V |
Voltage - Reverse Standoff (Typ): | 23.1V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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TVS – Diodes are important electronic component used for the protection of the sensitive circuits of a wide variety of electronic equipment. They are designed to absorb transient voltages caused by inductive spikes, electrostatic discharge, lightning and other kinds of electrical surges, and protect sensitive electronic components from damage. The TA6F27AHM3/6B is a transfer avalanche breakdown diode that can be applied in applications such as automotive electronics, industrial motor control, LED driver and many other situations where high-breakdown and high-current pulse applications are needed.
The TA6F27AHM3/6B is specifically designed for high-current pulse applications in automotive electronics, providing good electrical performance over a wide temperature range of - 40 to + 125°C and extended reverse breakdown performance. It provides superior protection for automotive circuits against extreme transients caused by inductive spikes, electrostatic discharge, and other transients that can affect sensitive electronic components.
The TA6F27AHM3/6B is based on the transfer avalanche breakdown principle and is fabricated utilizing a design process that involves forming two interdigitated arms of alternating P-type and N-type silicon cups. This structure has a high current carrying capacity and is capable of dissipating large amounts of energy during transient events. In addition, the diode is designed to maintain good protection performance for transients with peak amplitudes up to −40 V.
At the beginning of the avalanche breakdown process, the injection of carriers across the junction causes a large increase in conductivity. This results in a large pulse of current being drawn from the junction, limiting the amplitude of the applied voltage and dissipating the excess energy to nearby structures. When the applied voltage drops below the breakdown voltage, the diode switches back to its reverse-bias state, effectively clamping the voltage to a safe level.
The TA6F27AHM3/6B’s superior electrical performance is achieved through the use of high-density design which provides a large number of discrete regions with different resistances for avalanche breakdown. This lowers the effective capacitance of the diode, so transients can be suppressed more quickly and over a larger voltage range. Moreover, its low capacitance allows the TA6F27AHM3/6B to provide fast, stable, and safe protection against transients of up to −40 V.
In conclusion, the TA6F27AHM3/6B is an excellent choice for protecting sensitive electronic components in applications such as automotive electronics, industrial motor control, and LED driver, providing fast, safe, and reliable protection from transients of up to −40 V. It is also characterized by excellent electrical performance over a wide temperature range, making it suitable for a variety of electronic components that must operate in extreme environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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TA6F11AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 9.4V 15.6V DO22... |
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TA6F16AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 13.6V 22.5V DO2... |
TA6F18AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 15.3V 25.5V DO2... |
TA6F20AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 17.1V 27.7V DO2... |
TA6F22AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 18.8V 30.6V DO2... |
TA6F24AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
TA6F27AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 23.1V 37.5V DO2... |
TA6F30AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 25.6V 41.4V DO2... |
TA6F33AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 28.2V 45.7V DO2... |
TA6F36AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 30.8V 49.9V DO2... |
TA6F39AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 33.3V 53.9V DO2... |
TA6F43AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 36.8V 59.3V DO2... |
TA6F47AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 40.2V 64.8V DO2... |
TA6F51AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 43.6V 70.1V DO2... |
TA6F6.8AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 5.8V 10.5V DO22... |
TA6F7.5AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 6.4V 11.3V DO22... |
TA6F8.2AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 7.02V 12.1V DO2... |
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TA6F43AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 36.8V 59.3V DO2... |
TA6F33AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 28.2V 45.7V DO2... |
TA6F8.2AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V DO2... |
TA6F22AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V DO2... |
TA6F27AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V DO2... |
TA6F18AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.5V DO2... |
TA6F24AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
TA6F12AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V DO2... |
TA6F6.8AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V DO22... |
TA6F51AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V DO2... |
TA6F10AHM3_A/H | Vishay Semic... | 0.13 $ | 1000 | TVS DIODE 8.55V 14.5V DO2... |
TA6F11AHM3_A/H | Vishay Semic... | 0.13 $ | 1000 | TVS DIODE 9.4V 15.6V DO22... |
TA6F12AHM3_A/H | Vishay Semic... | 0.13 $ | 1000 | TVS DIODE 10.2V 16.7V DO2... |
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