Allicdata Part #: | TA6F30AHM3/6B-ND |
Manufacturer Part#: |
TA6F30AHM3/6B |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 25.6V 41.4V DO221AC |
More Detail: | N/A |
DataSheet: | TA6F30AHM3/6B Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 41.4V |
Supplier Device Package: | DO-221AC (SlimSMA) |
Package / Case: | DO-221AC, SMA Flat Leads |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 185°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 14.5A |
Series: | Automotive, AEC-Q101, PAR® |
Voltage - Breakdown (Min): | 28.5V |
Voltage - Reverse Standoff (Typ): | 25.6V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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TVS (Transient Voltage Suppressor) diodes are devices used to protect electrical systems from the destructive effects of electrical transients. The TA6F30AHM3/6B is a device designed to protect against electrostatic discharge (ESD). This general-purpose device is designed to meet the industry standards for ESD protection specified in IEC 61000-4-2 (Level 4).
The TA6F30AHM3/6B is constructed of a series of Series Connected, Bidirectional Unidirectional Silicon Avalanche Diodes (SBDs) and is available in three different package styles: a surface-mount 6-pin SOT-89 (SC-74), a 6-pin SMT flat-pack package (TSOP-6), and a 5-pin SMT flat-pack package (TSOP-5). The design enables operation at voltages up to 400 V, with a fast response time and a low clamping voltage to protect the system from electrical transients. The device is capable of handling high ESD pulses of up to 30A (at 8/20us) and has an operating temperature range of -55°C to +155°C.
In order to understand the working principle of the TA6F30AHM3/6B, one must first understand the principles of ESD protection. During an ESD event, the electric field in the air around the device is strong enough to cause a breakdown in the air gap and thus create an electric discharge. This electric discharge is conducted through the air and into the device, which creates an electrostatic transient. When this transient reaches the device, the avalanche breakdown of the SBDs dissipates the energy of the transient, thereby protecting the device.
The TA6F30AHM3/6B is designed to meet the industry standards for ESD protection specified in IEC 61000-4-2 (Level 4). In order to achieve this performance, the device utilizes SBDs connected in series. The series connection allows the device to have a low operating voltage and a fast response time, while the bidirectional unidirectional nature of the SBDs ensures that the device can handle the high peak currents present during ESD events. Furthermore, the package style allows for the device to be mounted directly onto the board while providing excellent thermal dissipation.
The TA6F30AHM3/6B is ideal for a wide range of applications, such as telecommunications, consumer electronics, automotive, and industrial systems as well as any application where ESD protection is required. Due to its low clamping voltage and wide operating temperature range, the TA6F30AHM3/6B is an excellent choice for the protection of high-speed data lines and sensitive ICs against ESD damage.
The TA6F30AHM3/6B is an effective and reliable device for the protection of electrical systems from the effects of electrical transients. Its series connection of SBDs provides a fast response time and high current protection for applications subject to frequent transient events. The low operating voltage and wide operating temperature range of this device make it an ideal solution for a wide range of applications requiring ESD protection.
The specific data is subject to PDF, and the above content is for reference
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TA6F15AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 12.8V 21.2V DO2... |
TA6F16AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 13.6V 22.5V DO2... |
TA6F18AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 15.3V 25.5V DO2... |
TA6F20AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 17.1V 27.7V DO2... |
TA6F22AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 18.8V 30.6V DO2... |
TA6F24AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
TA6F27AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 23.1V 37.5V DO2... |
TA6F30AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 25.6V 41.4V DO2... |
TA6F33AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 28.2V 45.7V DO2... |
TA6F36AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 30.8V 49.9V DO2... |
TA6F39AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 33.3V 53.9V DO2... |
TA6F43AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 36.8V 59.3V DO2... |
TA6F47AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 40.2V 64.8V DO2... |
TA6F51AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 43.6V 70.1V DO2... |
TA6F6.8AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 5.8V 10.5V DO22... |
TA6F7.5AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 6.4V 11.3V DO22... |
TA6F8.2AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 7.02V 12.1V DO2... |
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TA6F43AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 36.8V 59.3V DO2... |
TA6F33AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 28.2V 45.7V DO2... |
TA6F8.2AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V DO2... |
TA6F22AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V DO2... |
TA6F27AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V DO2... |
TA6F18AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.5V DO2... |
TA6F24AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
TA6F12AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V DO2... |
TA6F6.8AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V DO22... |
TA6F51AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V DO2... |
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TA6F11AHM3_A/H | Vishay Semic... | 0.13 $ | 1000 | TVS DIODE 9.4V 15.6V DO22... |
TA6F12AHM3_A/H | Vishay Semic... | 0.13 $ | 1000 | TVS DIODE 10.2V 16.7V DO2... |
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