TA6F43AHM3/6B Allicdata Electronics
Allicdata Part #:

TA6F43AHM3/6B-ND

Manufacturer Part#:

TA6F43AHM3/6B

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 36.8V 59.3V DO221AC
More Detail: N/A
DataSheet: TA6F43AHM3/6B datasheetTA6F43AHM3/6B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 59.3V
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 185°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 10.1A
Series: Automotive, AEC-Q101, PAR®
Voltage - Breakdown (Min): 40.9V
Voltage - Reverse Standoff (Typ): 36.8V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (transient voltage suppressor) diodes are a type of electronics designed to protect other components from high-voltage transients, such as electrostatic discharge (ESD) or electrical fast transients (EFT). The TA6F43AHM3/6B is a surface-mount TVS diode, operating up to 600W peak pulse power over a wide-range operating voltage (5V-40V).

The TA6F43AHM3/6B is designed primarily for ESD and EFT protection in mobile device electronics, including circuits using USB, HDMI and other high-speed interfaces. The device provides protection from transient voltage spikes induced by ESD or EFT from 150V HBM (human body model) up to 17KV CDM (contact discharge model). It also provides substantial protection from repetitive transient events (REEP) with exceptionally low leakage (IJ test-point characteristics) and minimal threshold voltage shifts.

The TA6F43AHM3/6B is designed with Low Capacitance (LC) and Low Clamping Voltage (LCV) technologies, which allow it to protect high-speed digital circuits while mitigating signal degradation. This LC and LCV technology boosts performance in terms of protection capability, response time, and signal integrity. Compared to traditional TVS diodes, this TVS diode provides superior ESD protection and its response time is twice faster, while producing no over- and/or under-voltage or passed-through pulses.

This TVS diode can protect high-speed data lines at beyond 6Gbps with clamping voltage below 5V. This device is also free of electrostatic charge build-up and therefore does not require additional protection measures. Moreover, the device’s very low capacitance (0.8pF typ) provides an additional level of ESD protection for high-speed data interface designs.

The TA6F43AHM3/6B is a silicon, silicon carbide (SiC) based, PN junction diode. It is available in a 0.6 x 0.3mm package and operates at temperature range of -55C to +125C. This device is RoHS and REACH compliant.

The working principle of the TA6F43AHM3/6B is simple. When a transient voltage spike causes the voltage to exceed its clamping voltage, the device conducts and draws the current away from the circuit under protection, clamping the transient voltage to a safe operating level. This prevents damaging transients from negatively affecting the circuit, preserving its performance and integrity.

The specific data is subject to PDF, and the above content is for reference

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