TAZB684K025CRSZ0800 Allicdata Electronics
Allicdata Part #:

TAZB684K025CRSZ0800-ND

Manufacturer Part#:

TAZB684K025CRSZ0800

Price: $ 2.23
Product Category:

Capacitors

Manufacturer: AVX Corporation
Short Description: CAP TANT 0.68UF 10% 25V 1505
More Detail: 0.68µF Molded Tantalum Capacitors 25V 1505 (3813 M...
DataSheet: TAZB684K025CRSZ0800 datasheetTAZB684K025CRSZ0800 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Request inventory verification / RoHS non-compliant
2500 +: $ 2.02275
Stock 1000Can Ship Immediately
$ 2.23
Specifications
Operating Temperature: -55°C ~ 125°C
Failure Rate: --
Features: High Reliability
Ratings: COTS
Manufacturer Size Code: B
Lead Spacing: --
Height - Seated (Max): 0.065" (1.65mm)
Size / Dimension: 0.150" L x 0.050" W (3.81mm x 1.27mm)
Package / Case: 1505 (3813 Metric)
Mounting Type: Surface Mount
Lifetime @ Temp.: --
Series: Military, MIL-PRF-55365/11, TAZ
ESR (Equivalent Series Resistance): 4 Ohm @ 100kHz
Type: Molded
Voltage - Rated: 25V
Tolerance: ±10%
Capacitance: 0.68µF
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Tantalum Capacitors

Tantalum capacitors are a type of electrolytic capacitor that use tantalum metal as the anode. The tantalum anode is covered with a dielectric oxide. At the oxide–electrolyte interface, the oxide is irregularly arranged, forming multiple areas where the charge is stored. As such, the capacitors have a large capacitance for a given volume.

TAZB684K025CRSZ0800 capacitors are constructed using a tantalum metal anode, an oxide dielectric material and an electrolytic cathode. With this type of structure, they offer a high energy density and low equivalent series resistance (ESR). This makes them particularly suitable for applications such as filtering, energy storage and decoupling.

Application Field

Tantalum capacitors are ideal for a variety of applications such as medical, military and aerospace. For these applications, their high energy storage capacity and low equivalent series resistance (ESR) offer advantages such as increased circuit stability and improved noise immunity.

In addition to these applications, TAZB684K025CRSZ0800 capacitors are also suitable for high frequency applications such as power management and radio-frequency (RF) filter networks. They have a long life, low inductance and easy assembly, making them popular for power supplies, automation control systems and personal consumer electronics such as laptops and smart phones.

Working Principle

The working principle of TAZB684K025CRSZ0800 capacitors is based on the thermionic emission of electrons from a heated metal surface. This process is known as the Nernst effect. Electrons are emitted from the metal surface due to a difference in potential between the surface and the electrolytic solution.

When a voltage is applied across the capacitor, the electrons are attracted to the positive terminal of the capacitor, reducing the potential of the metal surface and increasing the potential of the electrolytic solution. As a result of this electrostatic attraction, an electric field is created between the two terminals of the capacitor. This field stores energy, forming an electrical charge.

In addition to the traditional capacitance of the TAZB684K025CRSZ0800, the oxide layer of the tantalum capacitor also acts as a dielectric and limits the rate of charge transfer. This helps reduce unwanted RF noise and improves the capacitor’s performance in high-frequency applications.

The TAZB684K025CRSZ0800 capacitor is a reliable and efficient component that is suitable for a variety of applications, especially where high energy storage, stability and low ESR are important. From medical, military and aerospace applications to high frequency applications such as power management and RF filter networks, the TAZB684K025CRSZ0800 capacitor is a versatile component in any application.

The specific data is subject to PDF, and the above content is for reference

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