![TBC847B,LM Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | TBC847BLMTR-ND |
Manufacturer Part#: |
TBC847B,LM |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F SOT-23 TRANSISTOR FOR L |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 100MHz 320m... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.01855 |
6000 +: | $ 0.01674 |
15000 +: | $ 0.01455 |
30000 +: | $ 0.01310 |
75000 +: | $ 0.01164 |
150000 +: | $ 0.00970 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 100mA, 5mA |
Current - Collector Cutoff (Max): | 30nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 320mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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。TBC847B,LM transistors are widely used in a range of applications, such as analog and digital audio amplifiers and power converters. These bipolar junction transistors (BJTs) consist of three terminals: collector (C), emitter (E) and base (B). They are used in circuits that require a low power control signal to switch high power devices, such as resistors and transistors.
The working principle of TBC847B,LM transistors is based on the application of current to the base from the base-emitter junction. This causes electrons to be attracted to the base and, as a result, the electrons leave the emitter and enter the collector, forming a current flow. The amount of current flowing through the base-collector junction determines the current flowing through the load, which is determined by the voltage applied to the base as follows:
VBE = IC / β
Where VBE is the voltage across the base-emitter junction, IC is the Collector current, and β is the current gain of the transistor.
The current gain is the ratio of the collector current to the base current, i.e. β = IC / IB. It is a measure of the efficiency of the transistor, with higher values indicating a more efficient device. The current gain of TBC847B,LM transistors is typically around 200, meaning that a small current applied to the base will result in a large amount of current flowing through the collector.
The TBC847B,LM transistors are also known for their high collector to emitter breakdown voltage, which is typically at 120V. This means that the transistor can handle high voltage applications, such as in power converters and AC mains systems.
TBC847B,LM transistors also have very low noise, which is an important factor when selecting transistors for audio applications. Low noise ensures that there is minimal distortion to the audio signal, resulting in better audio performance.
In conclusion, TBC847B,LM transistors offer a wide range of benefits, including high current gain, high breakdown voltage, and low noise. These features make them ideal for a variety of applications, such as analog and digital audio amplifiers and power converters.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TBC847B,LM | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F SOT-23 TRANSISTO... |
TBC857B,LM | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F SOT-23 TRANSISTO... |
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