TCU422340HDH

Series:	--
Part Status:	Active
Voltage - Off State:	2.2kV
Voltage - Gate Trigger (Vgt) (Max):	4.5V
Current - Gate Trigger (Igt) (Max):	250mA
Voltage - On State (Vtm) (Max):	1.35V
Current - On State (It (AV)) (Max):	4000A
Current - On State (It (RMS)) (Max):	6283A
Current - Off State (Max):	250mA
Current - Non Rep. Surge 50, 60Hz (Itsm):	75424A, 80000A
SCR Type:	Standard Recovery
Operating Temperature:	-40°C ~ 125°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	TO-200AF
Supplier Device Package:	Hockey Puck

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Thyristors - SCRsThyristors are a type of semiconductor component that makes use of two-way switching techniques to control electrical power. Among the different types of thyristors, silicon-controlled rectifiers (SCRs) are particularly important, as they allow better control over the flow and direction of current in a circuit. The TCU422340HDH SCR is a type of silicon-controlled rectifier that is composed of four semiconductor layers surrounded by a single wire lead, which is used to hold the device in place and provide an electrical connection to allow current to flow through the device.The primary purpose of the TCU422340HDH SCR is to provide efficient switching of current in circuits, allowing the user to have greater control over the direction and flow of current. The device is typically used in a variety of applications, such as power transmission and distribution, industrial motor control, and electronic load switching. While the TCU422340HDH SCR is suitable for use in a wide variety of applications, it is particularly well-suited for applications where high peak currents need to be switched.The working principle of the TCU422340HDH SCR relies on the transfer of electrons between layers of n-type and p-type materials. The n-type layers are composed of a material that contains more electrons than holes to form a negative electrical charge, while the p-type layers are composed of a material that has more holes than electrons for a positive electrical charge. When a positive voltage is applied to the anode of the device and a negative voltage to the cathode, electrons from the positive layer are forced to move through the device and into the negative layer. This causes a transfer of electrons from the n-type to the p-type layer, which forms a conducting channel between the two layers, allowing current to flow from the cathode to the anode.The TCU422340HDH SCR is equipped with an internal thyristor and an external gate, which are used to control the device\'s operation. The thyristor is a device that is composed of four semiconductor layers, and is able to control the current flow through the device. When a voltage is applied to the gate, it causes the thyristor to turn on, and current is able to flow through the device. When the voltage is removed, the thyristor will turn off and current will no longer flow through the device. This allows the user to control the flow of current through the device.In conclusion, the TCU422340HDH SCR is a type of silicon-controlled rectifier that is composed of four semiconductor layers and is used for efficient switching of current in circuits. It can be used in a variety of applications, such as power transmission and distribution, industrial motor control, and electronic load switching. The device works by using an internal thyristor and an external gate to control the flow of current through the device, allowing the user to have greater control over the direction and flow of current.

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