Allicdata Part #: | TF262TH-4-TL-H-ND |
Manufacturer Part#: |
TF262TH-4-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 1MA 100MW |
More Detail: | JFET N-Channel 1mA 100mW Surface Mount VTFP |
DataSheet: | TF262TH-4-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0): | 140µA @ 2V |
Current Drain (Id) - Max: | 1mA |
Voltage - Cutoff (VGS off) @ Id: | 200mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 3.5pF @ 2V |
Power - Max: | 100mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | VTFP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are essential components used in many electrical engineering designs, such as amplifiers, switching circuits, and oscillators. The most widely used type of transistor is the field-effect transistor (FET). The basic structure of FET is composed of semi-conductivity pieces and gate electrodes. The gate is insulated from the semi-conductivity pieces by a gate insulator.
One of the common FET transistors is the TF262TH-4-TL-H. It is a transistor that utilizes a junction field-effect transistor (JFET) structure and is particularly useful in low-noise amplifier and RF mixer applications due to its small input capacitance and low gate-source capacitance variations. This device is often utilized in applications such as low noise amplification across a wide frequency range, off-isolation, impedance matching, and low distortion power switching applications.
The TF262TH-4-TL-H is an N-channel depletion-mode JFET. This type of transistor requires a positive gate-source voltage to reduce channel conductance. This means that a negative voltage applied to the gate will make the channel more conductive. The gate of TF262TH-4-TL-H transistor is made of high-frequency 4-terminal depletion-mode JFETs, and it offers a low input capacitance and a low gate-source capacitance variation. Besides, the gate-source capacitance of this device is very low, meaning that it has longer channels with fewer transistors. This allows for improved gain and power output with lower power requirements.
The working principle of the TF262TH-4-TL-H is based on the semiconductor material used in its fabrication. This semiconductor material is composed of an electron-donating layer and a hole-donating layer. The electric field created by applying voltage to the gate causes electrons and holes to move between the two layers. This electric field then modulates the conductivity of the junction region, which is the key factor in determining the transistor’s output. When a voltage is applied to the gate, the current flow through the junction electric field increases, turning the transistor “on.” When a negative voltage is applied to the gate, the current flow through the junction electric field decreases, turning the transistor “off.”
In conclusion, the TF262TH-4-TL-H is an N-channel depletion-mode JFET that is ideal for use in applications such as low noise amplification across a wide frequency range, off-isolation, impedance matching, and low distortion power switching applications. Its small input capacitance and low gate-source capacitance variation make it an attractive choice for use in these types of applications. The working principle of the TF262TH-4-TL-H is based on the electric field created by applying voltage to the gate, allowing for modulation of the conductivity of the junction region.
The specific data is subject to PDF, and the above content is for reference
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