TGL41-47A-E3/97 Allicdata Electronics
Allicdata Part #:

TGL41-47A-E3/97-ND

Manufacturer Part#:

TGL41-47A-E3/97

Price: $ 0.11
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 40.2V 64.8V DO213AB
More Detail: N/A
DataSheet: TGL41-47A-E3/97 datasheetTGL41-47A-E3/97 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
5000 +: $ 0.09592
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Current - Peak Pulse (10/1000µs): 6.2A
Base Part Number: TGL41
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Series: TransZorb®
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Voltage - Reverse Standoff (Typ): 40.2V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS or Transient Voltage Suppressors are surge protection devices presented in several topologies and implementations. Common in the electronics industry, they are used to safeguard system components from voltage spikes and transients. The TGL41-47A-E3/97 device is a “Low Capacitance” model designed to help with the ESD (electrostatic discharge) protection.

Impulses, transients, hot-switching, load dumping, reverse voltage, and electrostatic discharge (ESD) are some of the main factors to consider in the choice of a TVS. This particular model suppresses transients in the range of 6-250V and its power dissipation is of 300W impulse peak power, making it suitable for a variety of applications such as communication systems, computer motherboards, and digital devices.

As a diode, the TGL41-47A-E3/97 shares similarities with P-N junctions. The components that form it are the anode, cathode and semiconductor body, related as anode to the n-type layer and cathode to the p-type layer. It is a bidirectional protection device in which the anode is connected to the lowest voltage point of the circuit and the cathode is connected to the highest voltage potential.

When there is a rise in voltage in one direction, the p-n junction will enter into forward bias, allowing for the negative ions to drift towards the anode and crowding around it. This fast conduction in one direction keeps the voltage spike from going above a safe level. The other direction is blocked by a reverse biased p-n junction, creating an Avalanche Breakdown which also quenches the voltage spike.

A typical implementation involves connecting the diode’s anode to the ground and its cathode to the power source. When a lightning strike (or load dump or ESD pulse) happens, the voltage can rise to a high level, leading to an avalanche breakdown. The process of negative ions being attracted to the anode is what draws the voltage spike away from damaging other components.

Generally speaking, the choice of a TVS device should depend on the type of protection needed, the peak power which will be conducted and the environment in which it will be used. The TGL41-47A-E3/97 offers bidirectional protection and very low capacitance and is most suitable for communication, computer, and digital device applications.

The specific data is subject to PDF, and the above content is for reference

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