TIC108N-S Allicdata Electronics
Allicdata Part #:

TIC108N-S-ND

Manufacturer Part#:

TIC108N-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: THYRISTOR SCR 800V 5A
More Detail: SCR 800V 5A Standard Recovery Through Hole TO-220
DataSheet: TIC108N-S datasheetTIC108N-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - On State (It (RMS)) (Max): 5A
Supplier Device Package: TO-220
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 110°C
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A @ 50Hz
Current - Off State (Max): 1mA
Current - Hold (Ih) (Max): 10mA
Series: --
Current - On State (It (AV)) (Max): 3.2A
Voltage - On State (Vtm) (Max): 1.7V
Current - Gate Trigger (Igt) (Max): 1mA
Voltage - Gate Trigger (Vgt) (Max): 1V
Voltage - Off State: 800V
Part Status: Obsolete
Packaging: Tube 
Description

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Thyristors – SCRs are commonly used for energy control applications in various industrial and commercial settings. One type of SCR is the TIC108N-S, which is specifically designed for these applications. The TIC108N-S is a fast switching, high voltage and current silicon-controlled rectifier that provides reliable and efficient energy control for power electronics. This article will discuss the application field and working principle of the TIC108N-S.

The application field of the TIC108N-S covers a wide range of voltage and current regimes, from low voltage and low current through to high current and high voltage. This makes the TIC108N-S ideal for use in a variety of areas such as motor control, inductive heating, lighting, voltage regulation, and power electronics applications. For example, in motor control applications the TIC108N-S can be used to switch the motor on and off quickly and efficiently, while in inductive heating applications it can be used to accurately control the temperature of the process.

In terms of its working principle, the TIC108N-S is based on the Gate Turn-Off Thyristor (GTO) technology. This technology makes use of a metal oxide field oxide (MOSFET) device as the control element for the switching process. This device is connected to the gate of the SCR, and when a suitable voltage is applied to the gate, it will cause the MOSFET to turn on, allowing current to flow through the SCR. When the voltage is removed, the MOSFET will turn off and stop the current flow. This makes it possible to accurately and quickly control current flow through the device.

In addition to its fast switching speed, the TIC108N-S also offers high accuracy in current control, which makes it particularly suitable for controlling power applications. The device combines both voltage and current sensing features, allowing for accurate control of the available current. The device also features overcurrent and overvoltage protection, ensuring the user can safely and reliably control current flow through the device.

In conclusion, the TIC108N-S is a fast switching, high voltage and current silicon-controlled rectifier that offers reliable and efficient energy control for power electronics applications. It offers high accuracy in current control, overcurrent and overvoltage protection, and is suitable for a variety of application fields. The device is based on the Gate Turn-Off Thyristor (GTO) technology, which makes use of a MOSFET device as the control element for switching.

The specific data is subject to PDF, and the above content is for reference

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