TISP4015L1AJR-S Allicdata Electronics
Allicdata Part #:

TISP4015L1AJR-STR-ND

Manufacturer Part#:

TISP4015L1AJR-S

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: PROTECTOR SINGLE BIDIRECT 15V
More Detail: N/A
DataSheet: TISP4015L1AJR-S datasheetTISP4015L1AJR-S Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 15V
Voltage - Off State: 8V
Current - Peak Pulse (8/20µs): 120A
Current - Peak Pulse (10/1000µs): 30A
Current - Hold (Ih): 50mA
Number of Elements: 1
Capacitance: 30pF
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Description

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The TISP4015L1AJR-S is a high-speed bidirectional transient voltage suppressor (TVS) diode. It is primarily used to provide protection from electrostatic discharge (ESD), electrical fast transients (EFT), and low-to-medium energy surge events for applications in the consumer, computer, telecommunications, automotive, industrial, medical, and military markets. The component is offered in the small SOT-23 package, which allows for high speed performance in low-space applications.

The TISP4015L1AJR-S is an ideal solution for applications that require high speed, reliable protection from overvoltage events. The device is designed to clamp and suppress transient surges from 8V to 30V while operating up to 1500W peak pulse power (8/20μs). The TISP4015L1AJR-S is suitable for a wide range of applications, such as protecting high speed data lines, Ethernet ports, LAN port protection, and mobile device ESD protection. In addition, the device features a low dominant frequency of 0.7GHz and internal capacitance of 1pF. This enables it to operate in high speed applications up to 400MB/s.

The TISP4015L1AJR-S is a thyristor which works on the principle of avalanche breakdown. Under normal operating conditions, it acts as an open circuited diode. When the voltage across it exceeds a certain critical value, however, the device begins to conduct as the charge carriers (electrons) travelling through are accelerated to high velocity and then collide with the weakly bound electrons near the p-n junction. These collisions generate more charge carriers, which in turn cause an avalanche breakdown, and the current in the device increases exponentially. The voltage across the diode is limited as the avalanche effect dissipates the increased current.

The TISP4015L1AJR-S features a number of desirable attributes including low capacitance, low leakage current, and high surge handling capability, making it suitable for use in low/medium energy surge events. In addition, the device is highly reliable, providing maximum protection when exposed to ESD, EFT, or surge events. Finally, thanks to its small package size, the device is suitable for use in tight spaces where size is an issue.

In conclusion, the TISP4015L1AJR-S transient voltage suppressor (TVS) diode is ideal for applications requiring reliable protection from ESD, EFT, and low-to-medium energy surge events in the consumer, computer, telecommunications, automotive, industrial, medical, and military markets. The component features a low dominant frequency of 0.7GHz, high surge handling capability, low capacitance, and low leakage current. Its small form factor also makes it suitable for use in tight spaces. This makes it an ideal solution for high-speed data line protection and other applications that require reliable overvoltage protection.

The specific data is subject to PDF, and the above content is for reference

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